Patterning Si at the 1 nm length scale with aberration‐corrected electron‐beam lithography: tuning of plasmonic properties by design
Patterning of materials at single nanometer resolution allows engineering of quantum
confinement effects, as these effects are significant at these length scales, and yields direct …
confinement effects, as these effects are significant at these length scales, and yields direct …
Design and comprehensive analysis of an ultra-fast fractional-order temporal differentiator based on a plasmonic Bragg grating microring resonator
A Ahmadpour, A Habibzadeh-Sharif… - Optics …, 2021 - opg.optica.org
This paper presents the design and comprehensive analysis of an ultra-fast fractional-order
temporal differentiator (DIFF) based on a plasmonic inner-wall Bragg grating microring …
temporal differentiator (DIFF) based on a plasmonic inner-wall Bragg grating microring …
Principles of cholesterol regulation of ion channels
Ion channels are formed by both integral transmembrane proteins and pore-forming soluble
proteins. Their energetic levels in different conformational states are a function of lipid …
proteins. Their energetic levels in different conformational states are a function of lipid …
[PDF][PDF] Kombination aus Nanofabrikation und Nanometrologie auf einer planaren Ø100 mm Nanofabrikationsmaschine (NFM-100)
J Stauffenberg - 2024 - db-thueringen.de
Der Bedarf an hochpräziser Positionierung für die Anwendung der Nanofabrikation in
makroskopischen Arbeitsbereichen nimmt stetig zu. Durch einen neuen Grad der …
makroskopischen Arbeitsbereichen nimmt stetig zu. Durch einen neuen Grad der …
Mitigating challenges in aberration-corrected electron-beam lithography on electron-opaque substrates
Aberration-corrected electron-beam lithography (AC-EBL) using ultra-thin electron
transparent membranes has achieved single-digit nanometer resolution in two widely used …
transparent membranes has achieved single-digit nanometer resolution in two widely used …
Recent Progress in Nano-electronic Devices Based on EBL and IBL
Y Pan, K Xu - Current Nanoscience, 2020 - ingentaconnect.com
Electron beam lithography (EBL) and ion beam lithography (IBL) are extremely promising
nanofabrication techniques for building nano-electronic devices due to their outstanding …
nanofabrication techniques for building nano-electronic devices due to their outstanding …
Fabrication of field-effect transistors with transfer-free nanostructured carbon as the semiconducting channel material
Carbon nanostructures used as the active channel material in field effect transistors (FETs)
are appealing in microelectronics for their improved performance, such as their high speed …
are appealing in microelectronics for their improved performance, such as their high speed …
Electron Beam Lithography
Z Cui - Nanofabrication: Principles, Capabilities and Limits, 2024 - Springer
Electron beam lithography is of the highest resolution in nanoscale patterning. It works the
same way as optical lithography by exposure of a polymer resist but does not need a mask …
same way as optical lithography by exposure of a polymer resist but does not need a mask …
In Situ Study of the Impact of Aberration-Corrected Electron-Beam Lithography on the Electronic Transport of Suspended Graphene Devices
The implementation of aberration-corrected electron beam lithography (AC-EBL) in a 200
keV scanning transmission electron microscope (STEM) is a novel technique that could be …
keV scanning transmission electron microscope (STEM) is a novel technique that could be …