We present a comprehensive and up-to-date compilation of band parameters for all of the
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …

At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

Ab initio pseudopotential plane wave calculations and large 64-atom relaxed supercells are
used to investigate the structural and electronic properties of Ga N x Sb 1− x dilute alloys …

Density functional theory is employed to investigate the origins of bandgap bowing character
in transition-metal-dichalcogenide ternary alloyed monolayers (TMD-MLs). The available …

A phenomenological model is described for the calculations of the optical band bowing of III–
V semiconductor alloys. The optical band gap bowing is shown to account successfully for …

Dilute nitrides such as InAsN alloys represent a new class of highly mismatched
semiconductors alloys, which have recently attracted strong attention due to their unique …

The band gap bowings of InNxAs1− x, InNxSb1− x, and InAsxSb1− x alloys defined by the
optimized lattice constants are investigated using empirical tight binding (ETB) method. The …

The absence of bandgap bowing in the common-anion II–VI semiconductor ternary alloys is
investigated. As examples, we consider the Cd1− xZnxTe and Cd1− xZnxSe alloys. The …

The InNxAs1–x alloy is a very promising, although so far almost completely unexplored,
novel material for mid-IR emitters and detectors. InNAs/GaAs multiple quantum wells were …