Heterogeneous and monolithic 3D integration technology for mixed-signal ICs
For next-generation system-on-chips (SoCs) in diverse applications (RF, sensor, display,
etc.) which require high-performance, small form factors, and low power consumption …
etc.) which require high-performance, small form factors, and low power consumption …
The hardware foundation of 6G: The NEW-6G approach
The design of future 6th Generation (6G) wireless connect-compute-control networks
requires new approaches for the design of hardware, new materials and hybridization …
requires new approaches for the design of hardware, new materials and hybridization …
Bridging the gap between physical and circuit analysis for variability-aware microwave design: Modeling approaches
Process-induced variability is a growing concern in the design of analog circuits, and in
particular for monolithic microwave integrated circuits (MMICs) targeting the 5G and 6G …
particular for monolithic microwave integrated circuits (MMICs) targeting the 5G and 6G …
A 120–140-GHz LNA in 250-nm InP HBT
V Chauhan, N Collaert… - IEEE Microwave and …, 2022 - ieeexplore.ieee.org
This letter presents a-band low-noise amplifier (LNA) in 250-nm InP HBT technology for the
next-generation wireless applications. The LNA has a measured peak gain of 13 dB, a 3-dB …
next-generation wireless applications. The LNA has a measured peak gain of 13 dB, a 3-dB …
Effects of back metal on the DC and RF characteristics of 3D stacked InGaAs RF device for monolithic 3D RF applications
J Jeong, SK Kim, J Kim, DM Geum… - IEEE Electron Device …, 2023 - ieeexplore.ieee.org
In this letter, we demonstrate three-dimensional (3D) stacked InGaAs high-electron-mobility
transistors (HEMTs) on Si with back metal for a monolithic 3D RF platform. The devices are …
transistors (HEMTs) on Si with back metal for a monolithic 3D RF platform. The devices are …
22FDSOI device towards RF and mmWave applications
Z Zhao, S Lehmann, WL Oo, AK Sahoo… - 2021 IEEE BiCMOS …, 2021 - ieeexplore.ieee.org
This paper presents 22FDSOI device RF performance figure of merit dependencies on the
design parameters, such as gate length, width per finger, number of fingers, centerline poly …
design parameters, such as gate length, width per finger, number of fingers, centerline poly …
A Heterogeneously Integrated 256-Element 5G Phased Array: Design, Assembly, Test
In this paper, we present the design, assembly, and test of a heterogeneously integrated
dual-polarized 256-element 5G phased array covering 24 30 GHz. The design is based on a …
dual-polarized 256-element 5G phased array covering 24 30 GHz. The design is based on a …
CMOS-Compatible Ti/TiN/Al refractory Ohmic contact for GaAs heterojunction bipolar transistors grown on Ge/Si substrate
In this article, we demonstrate the Ti/TiN/Al (15/50/50 nm) ohmic contact on InGaP/GaAs
heterojunction bipolar transistors (HBTs) epitaxially grown on 200-mm Si substrate. We …
heterojunction bipolar transistors (HBTs) epitaxially grown on 200-mm Si substrate. We …
Variability-aware MMIC design through multiphysics modelling
SD Guerrieri, C Ramella, E Catoggio… - 2022 IEEE MTT-S …, 2022 - ieeexplore.ieee.org
We present a novel multiphysics approach to the variability-aware modelling of MMIC
stages, including technological variations in both the active devices and in the passive …
stages, including technological variations in both the active devices and in the passive …
Introduction to 5G applications and beyond
N Collaert - New Materials and Devices Enabling 5G Applications …, 2024 - Elsevier
To achieve the increased throughput that future communication systems will require, wider
bandwidths must be exploited. While complementary metal-oxide semiconductor (CMOS) is …
bandwidths must be exploited. While complementary metal-oxide semiconductor (CMOS) is …