Impact of oxygen plasma power on the performance of Ga2O3 passivated GaN ultraviolet photodetectors
A Chatterjee, V Agnihotri, S Porwal, S Khan… - Applied Surface …, 2024 - Elsevier
The role of oxygen plasma power on the extent of surface passivation of Gallium Nitride
(GaN) epitaxial layers and the photo-response of Au/Ni/GaN Schottky detectors is …
(GaN) epitaxial layers and the photo-response of Au/Ni/GaN Schottky detectors is …
Low-temperature photoluminescence characteristic of Tm-doped Ga2O3 films for light emitting diodes application
Z Chen, G Deng, K Saito, T Tanaka, Q Guo - Optical Materials, 2024 - Elsevier
Tm-doped Ga 2 O 3 films hold significant promise for application in light-emitting diodes
(LEDs). A comprehensive understanding of their photoluminescence properties is pivotal for …
(LEDs). A comprehensive understanding of their photoluminescence properties is pivotal for …
Theoretical approach to thermal sensitivity capability of metal-semiconductor diodes with different Schottky contact area
A Turut - Journal of Vacuum Science & Technology B, 2023 - pubs.aip.org
Many of the device parameters measured in scientific research and engineering
applications depend on the ambient temperature to varying degrees. A Schottky barrier …
applications depend on the ambient temperature to varying degrees. A Schottky barrier …
High-performance and low-power consumption deep UV photodetectors based on MOCVD-grown ZnGa2O4 epilayers with high temperature functionality
This work reports on the fabrication of excellent quality deep ultraviolet photodetectors (DUV
PDs) based on metalorganic chemical vapor deposition (MOCVD) grown spinel ZnGa 2 O 4 …
PDs) based on metalorganic chemical vapor deposition (MOCVD) grown spinel ZnGa 2 O 4 …
MOCVD growth of β-Ga2O3 with fast growth rates (> 4.3 μm/h), low controllable doping, and superior transport properties
Si-doped β-phase (010) Ga 2 O 3 epi-films with fast growth rates were comprehensively
investigated using trimethylgallium (TMGa) as the Ga precursor via metalorganic chemical …
investigated using trimethylgallium (TMGa) as the Ga precursor via metalorganic chemical …
Investigation of traps in halide vapor-phase epitaxy-grown β-Ga2O3 epilayers/n+-Ga2O3 using deep-level transient spectroscopy
H Sheoran, JK Kaushik, V Kumar… - … Science and Technology, 2024 - iopscience.iop.org
A detailed investigation of deep traps in halide vapor-phase epitaxy (HVPE)-grown β-Ga 2 O
3 epilayers has been done by performing deep-level transient spectroscopy (DLTS) from …
3 epilayers has been done by performing deep-level transient spectroscopy (DLTS) from …
Correlation between Experimental and Modeled Capacitance-Voltage Characteristics of Ga2O3 Schottky Barrier Diode in Temperature Range of 300 to 673K
TH Vo, S Kim, H Ryou, DW Jeon, J Hwang… - Physica B: Condensed …, 2025 - Elsevier
The experimental and modeling results of the capacitance-voltage characteristics of a Pt/Ga
2 O 3 Schottky barrier diode (SBD) are correlated in the temperature range of 300 to 673K …
2 O 3 Schottky barrier diode (SBD) are correlated in the temperature range of 300 to 673K …