Design of a CMOS potentiostat circuit for electrochemical detector arrays
S Ayers, KD Gillis, M Lindau… - IEEE Transactions on …, 2007 - ieeexplore.ieee.org
High-throughput electrode arrays are required for advancing devices for testing the effect of
drugs on cellular function. In this paper, we present design criteria for a potentiostat circuit …
drugs on cellular function. In this paper, we present design criteria for a potentiostat circuit …
A current mirroring integration based readout circuit for high performance infrared FPA applications
Reports a current mirroring integration (CMI) CMOS readout circuit for high-resolution
infrared focal plane array (FPA) applications. The circuit uses a feedback structure with …
infrared focal plane array (FPA) applications. The circuit uses a feedback structure with …
High-performance CMOS buffered gate modulation input (BGMI) readout circuits for IR FPA
CC Hsieh, CY Wu, TP Sun, FW Jih… - IEEE journal of solid …, 1998 - ieeexplore.ieee.org
A new CMOS current readout structure for the infrared (IR) focal-plane-array (FPA), called
the buffered gate modulation input (BGMI) circuit, is proposed in this paper. Using the …
the buffered gate modulation input (BGMI) circuit, is proposed in this paper. Using the …
High-temperature operation normal incident 256/spl times/256 InAs-GaAs quantum-dot infrared photodetector focal plane array
SF Tang, CD Chiang, PK Weng, YT Gau… - IEEE photonics …, 2006 - ieeexplore.ieee.org
In this letter, a 256/spl times/256 midwavelength infrared focal plane array (FPA) based on
30-period InAs-GaAs quantum-dot infrared photodetectors (QDIPs) is fabricated. The …
30-period InAs-GaAs quantum-dot infrared photodetectors (QDIPs) is fabricated. The …
Multi-photodetector unit cell
M Stark - US Patent 6,693,670, 2004 - Google Patents
A multi-cell cluster which includes a plurality of light-detecting unit cells and a single charge-
integration and readout circuitry. Typically, each of the cells produces charge representative …
integration and readout circuitry. Typically, each of the cells produces charge representative …
A new CMOS pixel structure for low-dark-current and large-array-size still imager applications
YC Shih, CY Wu - IEEE Transactions on Circuits and Systems I …, 2004 - ieeexplore.ieee.org
A pixel structure for still CMOS imager application called the pseudoactive pixel sensor
(PAPS) is proposed and analyzed in this paper. It has the advantages of a low dark current …
(PAPS) is proposed and analyzed in this paper. It has the advantages of a low dark current …
A 2-D velocity-and direction-selective sensor with BJT-based silicon retina and temporal zero-crossing detector
HC Jiang, CY Wu - IEEE Journal of Solid-State Circuits, 1999 - ieeexplore.ieee.org
In this paper, a 2-D velocity-and direction-selective visual motion sensor with a bipolar
junction transistor (BJT)-based silicon retina and temporal zero-crossing detector is …
junction transistor (BJT)-based silicon retina and temporal zero-crossing detector is …
A novel readout integrated circuit with a dual-mode design for single-and dual-band infrared focal plane array
TP Sun, YC Lu, HL Shieh - Infrared Physics & Technology, 2013 - Elsevier
This paper proposes the design of a dual-band readout circuit structure for infrared imaging
systems. The design uses a capacitive transimpedance amplifier with a single-stage …
systems. The design uses a capacitive transimpedance amplifier with a single-stage …
Sub-nanoampere one-shot single electron transistor readout electrometry below 10 kelvin
The Single Electron Transistor holds the potential to be a suitable readout device for future
solid-state quantum computers. The low temperature measurement results of a 0.5 μm …
solid-state quantum computers. The low temperature measurement results of a 0.5 μm …
Image sensors with improved signal to noise ratio
M Stark - US Patent 6,822,213, 2004 - Google Patents
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Fossum et al. 5,481,301 A 1/1996 Cazaux et al. 5,485,004 A 1/1996 Suzuki et al. 5,521,366 …