Memristive crossbar arrays for brain-inspired computing
With their working mechanisms based on ion migration, the switching dynamics and
electrical behaviour of memristive devices resemble those of synapses and neurons, making …
electrical behaviour of memristive devices resemble those of synapses and neurons, making …
Resistive crossbars as approximate hardware building blocks for machine learning: Opportunities and challenges
Traditional computing systems based on the von Neumann architecture are fundamentally
bottlenecked by data transfers between processors and memory. The emergence of data …
bottlenecked by data transfers between processors and memory. The emergence of data …
An artificial neuron based on a threshold switching memristor
Artificial neurons and synapses are critical units for processing intricate information in
neuromorphic systems. Memristors are frequently engineered as artificial synapses due to …
neuromorphic systems. Memristors are frequently engineered as artificial synapses due to …
Advanced technology and systems of cross point memory
A Fazio - 2020 IEEE International Electron Devices Meeting …, 2020 - ieeexplore.ieee.org
Cross point memories are ideally suited to fill computer memory hierarchy gaps of memory
capacity-cost and storage performance. System innovations exploiting the capability of 3D …
capacity-cost and storage performance. System innovations exploiting the capability of 3D …
Nvmexplorer: A framework for cross-stack comparisons of embedded non-volatile memories
Repeated off-chip memory accesses to DRAM drive up operating power for data-intensive
applications, and SRAM technology scaling and leakage power limits the efficiency of …
applications, and SRAM technology scaling and leakage power limits the efficiency of …
Performance Enhancement of Ag/HfO2 Metal Ion Threshold Switch Cross-Point Selectors
A metal ion threshold switch (MITS) based on an Ag/TiN/HfO 2/Pt stack is experimentally
demonstrated with improved endurance. The incorporation of a low-temperature atomic …
demonstrated with improved endurance. The incorporation of a low-temperature atomic …
Impact of selector devices in analog RRAM-based crossbar arrays for inference and training of neuromorphic system
The impact of selector devices on the inference and training accuracy of a resistive random
access memory (RRAM)-based neuromorphic computing system is rarely studied. In this …
access memory (RRAM)-based neuromorphic computing system is rarely studied. In this …
Resistive neural hardware accelerators
Deep neural networks (DNNs), as a subset of machine learning (ML) techniques, entail that
real-world data can be learned, and decisions can be made in real time. However, their wide …
real-world data can be learned, and decisions can be made in real time. However, their wide …
Cycling induced metastable degradation in GeSe Ovonic threshold switching selector
Ovonic threshold switching (OTS) selector is a promising candidate to suppress the sneak
current paths in emerging memory arrays, but there is still a gap between its performance …
current paths in emerging memory arrays, but there is still a gap between its performance …
The investigations of characteristics of GeSe thin films and selector devices for phase change memory
G Liu, L Wu, X Chen, T Li, Y Wang, T Guo, Z Ma… - Journal of Alloys and …, 2019 - Elsevier
Ovonic threshold switching (OTS) selector is a key technology for high-density crossbar
memory array. The basic characteristics of GeSe OTS material including structural …
memory array. The basic characteristics of GeSe OTS material including structural …