Metal organic vapor phase epitaxy of high-indium-composition InGaN quantum dots towards red micro-LEDs
L Yu, L Wang, P Yang, Z Hao, J Yu, Y Luo… - Optical Materials …, 2022 - opg.optica.org
Micro-scale light-emitting diodes (micro-LEDs) are regarded as the next generation display
technology. Compared to blue and green ones, InGaN-based red micro-LEDs require higher …
technology. Compared to blue and green ones, InGaN-based red micro-LEDs require higher …
Three dimensional characterization of GaN-based light emitting diode grown on patterned sapphire substrate by confocal Raman and photoluminescence …
We performed depth-resolved PL and Raman spectral mappings of a GaN-based LED
structure grown on a patterned sapphire substrate (PSS). Our results showed that the …
structure grown on a patterned sapphire substrate (PSS). Our results showed that the …
[HTML][HTML] Influence of dislocation density on internal quantum efficiency of GaN-based semiconductors
By considering the effects of stress fields coming from lattice distortion as well as charge
fields coming from line charges at edge dislocation cores on radiative recombination of …
fields coming from line charges at edge dislocation cores on radiative recombination of …
Investigations on morphology, growth mode and indium incorporation in MOCVD grown InGaN/n-GaN heterostructures
InGaN layers were grown on n-GaN/GaN/sapphire template using metal organic chemical
vapor deposition system by varying Indium (In) flow rate as 11, 13 and 14 μmol/min. The …
vapor deposition system by varying Indium (In) flow rate as 11, 13 and 14 μmol/min. The …
[PDF][PDF] Chiao-Yun Chang1, Yuh-Renn Wu3, tien-Chang Lu1 & Yu-Ming Chang2
H Li, HY Cheng, WL Chen, YH Huang, CK Li - academia.edu
We performed depth-resolved pL and Raman spectral mappings of a GaN-based LeD
structure grown on a patterned sapphire substrate (pss). our results showed that the Raman …
structure grown on a patterned sapphire substrate (pss). our results showed that the Raman …
GaN Nanoflowers: Growth to Optoelectronic Device
This chapter reviews the journey of Gallium nitride (GaN) nanoflower (NF) from epitaxial
growth to highly efficient optoelectronic devices. It focuses on the photodetection prospect of …
growth to highly efficient optoelectronic devices. It focuses on the photodetection prospect of …