The role of power device technology in the electric vehicle powertrain

E Robles, A Matallana, I Aretxabaleta… - … Journal of Energy …, 2022 - Wiley Online Library
In the automotive industry, the design and implementation of power converters and
especially inverters, are at a turning point. Silicon (Si) IGBTs are at present the most widely …

Solid-state transformer and MV grid tie applications enabled by 15 kV SiC IGBTs and 10 kV SiC MOSFETs based multilevel converters

S Madhusoodhanan, A Tripathi, D Patel… - IEEE Transactions …, 2015 - ieeexplore.ieee.org
Medium-voltage (MV) SiC devices have been developed recently which can be used for
three-phase MV grid tie applications. Two such devices, 15 kV SiC insulated-gate bipolar …

High switching performance of 1700-V, 50-A SiC power MOSFET over Si IGBT/BiMOSFET for advanced power conversion applications

S Hazra, A De, L Cheng, J Palmour… - IEEE transactions on …, 2015 - ieeexplore.ieee.org
Due to wider band gap of silicon carbide (SiC) compared to silicon (Si), MOSFET made in
SiC has considerably lower drift region resistance, which is a significant resistive component …

A Transformerless Intelligent Power Substation: A three-phase SST enabled by a 15-kV SiC IGBT

K Mainali, A Tripathi… - IEEE Power …, 2015 - ieeexplore.ieee.org
The solid-state transformer (SST) is a promising power electronics solution that provides
voltage regulation, reactive power compensation, dc-sourced renewable integration, and …

Influence of paralleling dies and paralleling half-bridges on transient current distribution in multichip power modules

H Li, W Zhou, X Wang, S Munk-Nielsen… - … on Power Electronics, 2018 - ieeexplore.ieee.org
This letter addresses the transient current distribution in the multichip half-bridge power
modules, where two types of paralleling connections with different current commutation …

A novel DBC layout for current imbalance mitigation in SiC MOSFET multichip power modules

H Li, S Munk-Nielsen, S Bȩczkowski… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
This letter proposes a novel direct bonded copper (DBC) layout for mitigating the current
imbalance among the paralleled SiC MOSFET dies in multichip power modules. Compared …

Design considerations of a 15-kV SiC IGBT-based medium-voltage high-frequency isolated DC–DC converter

AK Tripathi, K Mainali, DC Patel… - IEEE Transactions …, 2015 - ieeexplore.ieee.org
A dual active bridge (DAB) is a zero-voltage switching (ZVS) high-power isolated dc-dc
converter. The development of a 15-kV SiC insulated-gate bipolar transistor switching …

A review on recent characterization effort of CM EMI in power electronics system with emerging wide band gap switch

A Amin, S Choi - 2019 IEEE Electric Ship Technologies …, 2019 - ieeexplore.ieee.org
This paper provides review of recent approaches in characterization of common mode
electromagnetic interference (EMI) of the wide bandgap (WB) power switch in emerging …

Methodology for characterization of common-mode conducted electromagnetic emissions in wide-bandgap converters for ungrounded shipboard applications

AN Lemmon, R Cuzner, J Gafford… - IEEE Journal of …, 2017 - ieeexplore.ieee.org
This paper describes the development of a dedicated electromagnetic interference (EMI)
characterization platform for the evaluation of wide bandgap-based converters in …

An integrated modular motor drive with shared cooling for axial flux motor drives

AH Mohamed, H Vansompel… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
In this article, a circumscribing polygon integrated modular motor drive topology with shared
cooling for the power converter and the electrical machine is proposed and benchmarked …