From ferroelectric material optimization to neuromorphic devices
Due to the voltage driven switching at low voltages combined with nonvolatility of the
achieved polarization state, ferroelectric materials have a unique potential for low power …
achieved polarization state, ferroelectric materials have a unique potential for low power …
Fluorite‐Structured Ferroelectric and Antiferroelectric Materials: A Gateway of Miniaturized Electronic Devices
Ferroelectric (FE) and antiferroelectric (AFE) materials are used for several memory‐related
and energy‐related applications. Perovskite materials (eg, bulk ceramics) remain the most …
and energy‐related applications. Perovskite materials (eg, bulk ceramics) remain the most …
Roadmap on ferroelectric hafnia-and zirconia-based materials and devices
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
A Perspective on ferroelectricity in hafnium oxide: Mechanisms and considerations regarding its stability and performance
Ferroelectric hafnium oxides are poised to impact a wide range of microelectronic
applications owing to their superior thickness scaling of ferroelectric stability and …
applications owing to their superior thickness scaling of ferroelectric stability and …
Unveiled Ferroelectricity in Well‐Known Non‐Ferroelectric Materials and Their Semiconductor Applications
Ferroelectric materials are considered ideal for emerging memory devices owing to their
characteristic remanent polarization, which can be switched by applying a sufficient electric …
characteristic remanent polarization, which can be switched by applying a sufficient electric …
[HTML][HTML] Synergetic contributions of chemical doping and epitaxial stress to polarization in ferroelectric HfO2 films
Literature is rich on the study of different strategies to tailor ferroelectric properties of HfO 2.
Among them, chemical doping is the most studied. La doped HfO 2 films have attracted …
Among them, chemical doping is the most studied. La doped HfO 2 films have attracted …
An Aqueous Route to Oxygen-Deficient Wake-Up-Free La-Doped HfO2 Ferroelectrics for Negative Capacitance Field Effect Transistors
The crucial role of nanocrystalline morphology in stabilizing the ferroelectric orthorhombic
(o)-phase in doped-hafnia films is achieved via chemical solution deposition (CSD) by …
(o)-phase in doped-hafnia films is achieved via chemical solution deposition (CSD) by …
Effect of stress on fluorite-structured ferroelectric thin films for semiconductor devices
Ferroelectricity, ie, the characteristic of polar crystals whose spontaneous polarization can
be reversed by the application of an appropriate electric field, originates from the formation …
be reversed by the application of an appropriate electric field, originates from the formation …
Wake-up-free properties and high fatigue resistance of HfxZr1− xO2-based metal–ferroelectric–semiconductor using top ZrO2 nucleation layer at low thermal budget …
T Onaya, T Nabatame, M Inoue, T Sawada, H Ota… - APL Materials, 2022 - pubs.aip.org
The discovery of ferroelectricity in HfO2-based thin films in 2011 1, 2 introduced the
possibility of integrating and scaling ferroelectric memory devices with three-dimensional …
possibility of integrating and scaling ferroelectric memory devices with three-dimensional …
Ferroelectricity in the Al doped HfO2
Abstract Recently, hafnia (HfO 2)-based ferroelectrics have attracted much attention due to
their unique features such as superior ferroelectricity at an ultra-thin thickness, large …
their unique features such as superior ferroelectricity at an ultra-thin thickness, large …