High-performance ultraviolet photodetector based on a zinc oxide nanoparticle@ single-walled carbon nanotube heterojunction hybrid film
A hybrid film consisting of zinc oxide nanoparticles (ZnO NPs) and carbon nanotubes
(CNTs) is formed on a glass substrate using a simple and swift spin coating process for the …
(CNTs) is formed on a glass substrate using a simple and swift spin coating process for the …
MIS-like structures with silicon-rich oxide films obtained by HFCVD: Their response as photodetectors
GO Mendoza Conde, JA Luna López… - Sensors, 2022 - mdpi.com
MIS-type structures composed of silicon-rich oxide (SRO), thin films deposited by hot
filament chemical vapor deposition (HFCVD), show interesting IV and It properties under …
filament chemical vapor deposition (HFCVD), show interesting IV and It properties under …
Effect of Ag decoration on the photodetection of catalyst-free synthesized vertically oriented SiOx NW arrays
This study reports a catalyst-free synthesis of silver (Ag) nanoparticles (NPs) decorated SiO
x nanowire (NW) arrays on silicon (Si) substrates by employing the GLAD technique. A huge …
x nanowire (NW) arrays on silicon (Si) substrates by employing the GLAD technique. A huge …
Selective photosensitivity of metal–oxide–semiconductor structures with SiOx layer annealed at high temperature
SiO x layers with x= 1.15 and 1.3 and thicknesses of 50 and 100 nm were deposited on
crystalline silicon wafers by thermal evaporation in vacuum. Part of the samples were …
crystalline silicon wafers by thermal evaporation in vacuum. Part of the samples were …
Ultraviolet, visible and near infrared photoresponse of SiO2/Si/SiO2 multilayer system into a MOS capacitor
KE González-Flores, JL Frieiro, P Horley… - Materials Science in …, 2021 - Elsevier
In this paper, we report on the photoresponse properties of a SiO 2/Si/SiO 2 multilayer (ML)
system deposited at 500° C and integrated into a metal-oxide-semiconductor structure …
system deposited at 500° C and integrated into a metal-oxide-semiconductor structure …
[PDF][PDF] 磷/硼共掺杂纳米硅的微观结构与光电性质
李东珂， 陈佳明， 孙腾， 翟章印， 陈贵宾 - 人工晶体学报, 2022 - researching.cn
采用射频(RF) 等离子体增强化学气相沉积系统制备了硅/二氧化硅多层膜样品,
在异质结限制性晶化作用下得到了尺寸均匀的磷/硼共掺杂纳米硅. 通过拉曼光谱(Raman) …
在异质结限制性晶化作用下得到了尺寸均匀的磷/硼共掺杂纳米硅. 通过拉曼光谱(Raman) …
Influence of fast neutron irradiation on the phase composition and optical properties of homogeneous SiOx and composite Si–SiOx thin films
Layers and devices utilizing semiconductor nanocrystals have been the subjects of intensive
research due to applications in opto-and microelectronic devices, solar cells, detectors …
research due to applications in opto-and microelectronic devices, solar cells, detectors …
Study of the resistive switching behavior in Si/N:SiOx (x<2) multilayer-based MOS devices
B Palacios-Márquez… - 2022 IEEE Latin …, 2022 - ieeexplore.ieee.org
This work studies the resistive switching properties in Si/N: SiO x (x< 2) multilayer (ML)
structures. The thickness of Si layers was kept constant (4 nm) while the thickness of the N …
structures. The thickness of Si layers was kept constant (4 nm) while the thickness of the N …
Study of the photoresponse of ITO/SiO2/Si/SiO2/Al MIS capacitor structures
JMG Martínez, KE González-Flores… - 2022 IEEE Latin …, 2022 - ieeexplore.ieee.org
In this work, we report on the photoresponse properties of metal-insulator-semiconductor
(MIS) devices using a SiO 2/Si/SiO 2 multilayer (ML) as active I-layer and deposited on p …
(MIS) devices using a SiO 2/Si/SiO 2 multilayer (ML) as active I-layer and deposited on p …
Microstructure and Optical-Electrical Properties of Phosphorus/Boron Co-Doped Silicon Nanocrystals.
LI Dongke, C Jiaming, SUN Teng… - Journal of Synthetic …, 2022 - search.ebscohost.com
Abstract Si/SiO< sub> 2</sub> multilayers were fabricated by RF plasma enhanced
chemical vapor deposition system, and phosphorus/boron (P/B) co-doped silicon …
chemical vapor deposition system, and phosphorus/boron (P/B) co-doped silicon …