The objective of this review article is to give an overview of the current state-of-the-art of
photoluminescence (PL) spectroscopy as a characterization tool in the study of …

Thin conducting films are distinct from bulk materials and have become prevalent over the
past decades as they possess unique physical, electrical, optical, and mechanical …

Neutral-donor–bound-exciton transitions have been observed in ZnO. The isolated neutral
donors are made up of defect pair complexes. The neutral-donor nature of these pair …

The photoluminescence (PL) spectra of GaAs have been measured as a function of
temperature between 2 and 280 K. Measurements have been performed on a high-quality …

Two concentration ranges of silicon doping in MBE-grown GaAs films have been
investigated in some detail. In lightly doped films, with a free-electron concentration of≈ 10 …

High‐purity, lightly Si‐doped (μ77∼ 70 000–126 000 cm2/V s and n 77∼ 2–8× 1014 cm− 3)
molecular beam epitaxy (MBE) GaAs layers have been characterized using variable …

We report on the growth by molecular beam epitaxy of high‐quality GaAs and Al x Ga1− x As
(x≲ 0.43), and discuss the effect of system parameters on material quality. The highest Hall …

The incorporation of impurities in GaAs epitaxial layers grown from trimethyl gallium (TMG)
and AsH3 has been studied in detail by varying a large number of growth parameters. These …

The incorporation mechanisms of residual impurities in GaAs layers grown by molecular‐
beam epitaxy has been investigated by high‐resolution photoluminescence (PL) …

We present the nanoheteroepitaxial growth of gallium arsenide (GaAs) on nano-patterned
silicon (Si)(001) substrates fabricated using a CMOS technology compatible process. The …