Comparison of stress states in GaN films grown on different substrates: Langasite, sapphire and silicon
We demonstrate the evolution of GaN films on novel langasite (LGS) substrate by plasma-
assisted molecular beam epitaxy, and assessed the quality of grown GaN film by comparing …
assisted molecular beam epitaxy, and assessed the quality of grown GaN film by comparing …
Temperature dependence of stress and optical properties in AlN films grown by MOCVD
W Wei, Y Peng, J Wang, M Farooq Saleem, W Wang… - Nanomaterials, 2021 - mdpi.com
AlN epilayers were grown on a 2-inch [0001] conventional flat sapphire substrate (CSS) and
a nano-patterned sapphire substrate (NPSS) by metalorganic chemical vapor deposition. In …
a nano-patterned sapphire substrate (NPSS) by metalorganic chemical vapor deposition. In …
Scalable nano-integration strategy: Controllable three-dimensional monocrystalline GaN nanostructures from nanobelts to nanonetwork
LL Wang, P Li, C Lee, S Sun, N Ji, H Chen… - Journal of Alloys and …, 2024 - Elsevier
The effective and scalable assembly of 1D nano-units into ordered 3D monocrystalline
networks remains a challenge. Based on the crystal structure and growth characteristics of …
networks remains a challenge. Based on the crystal structure and growth characteristics of …
Broad visible emission from GaN nanowires grown on n-Si (1 1 1) substrate by PVD for solar cell application
Nanostructured gallium nitrides (GaNs) were grown on a catalyst–free Si (111) substrates
using physical vapor deposition via thermal evaporation of GaN powder at 1150° C in the …
using physical vapor deposition via thermal evaporation of GaN powder at 1150° C in the …
Cubic and hexagonal GaN nanoparticles synthesized at low temperature
This study involves a simple and low cost chemical method for the synthesis of Gallium
Nitride (GaN) nanoparticles at low temperature. Structural and optical characterizations were …
Nitride (GaN) nanoparticles at low temperature. Structural and optical characterizations were …
Effect of abnormally oriented grains on the ferroelectric properties of Al0. 65Sc0. 35N thin films
J Xi, D Zhou, Y Tong, Y Zhao, T Lv - Materials Today Communications, 2024 - Elsevier
The wide bandgap wurtzite Al 1-x Sc x N ferroelectric material is compatible with
semiconductor processes and offers advantages such as high remanent polarization (P r) …
semiconductor processes and offers advantages such as high remanent polarization (P r) …
Synthesis of wurtzite GaN thin film via spin coating method
In this research, hexagonal wurtzite structure gallium nitride (GaN) thin film was grown on
silicon (Si) substrate by using spin coating deposition method. Simple ethanol-based …
silicon (Si) substrate by using spin coating deposition method. Simple ethanol-based …
Heteroepitaxial growth of GaN/Si (111) junctions in ammonia-free atmosphere: Charge transport, optoelectronic, and photovoltaic properties
We report the catalyst-free growth of gallium nitride (GaN) nanostructures on n-Si (111)
substrates using physical vapor deposition via thermal evaporation of GaN powder at 1150 …
substrates using physical vapor deposition via thermal evaporation of GaN powder at 1150 …
Raman scattering study on pristine and oxidized n-type porous silicon
F Zhong, Z Jia - Physica B: Condensed Matter, 2013 - Elsevier
We have investigated the effects of oxidation on Raman spectra of porous silicon (PS). Many
Si–H x bonds were indicated in as-anodized PS. Compared to crystalline silicon, the …
Si–H x bonds were indicated in as-anodized PS. Compared to crystalline silicon, the …
[HTML][HTML] Dy3+, Tb3+ 共掺氮化铝薄膜结构与发光特性
罗璇， 孟河辰， 王晓丹， 陈子航， 曾雄辉， 高晓冬… - Chinese …, 2024 - opticsjournal.net
摘要通过离子注入方法, 首次将Dy 3+ 和Tb 3+ 共掺入氮化铝(AlN) 薄膜, 并研究了其晶体结构,
阴极荧光和能量传递机制. 拉曼光谱(Raman) 和X 射线衍射(XRD) 结果显示, 在Tb 3+ …
阴极荧光和能量传递机制. 拉曼光谱(Raman) 和X 射线衍射(XRD) 结果显示, 在Tb 3+ …