C Zheng, Y Liao, ST Han, Y Zhou - Advanced Electronic …, 2020 - Wiley Online Library
Interface is a valuable research area for the three‐terminal organic memory device, which is an important member of memory family, as the transport and trapping operation of charge …
O Recalde-Benitez, T Jiang, R Winkler… - Communications …, 2023 - nature.com
Advanced nanomaterials are at the core of innovation for the microelectronics industry. Designing, characterizing, and testing two-terminal devices, such as metal-insulator-metal …
BaTiO 3 thin films with different annealing times were grown on LSMO/STO (001) substrates by pulsed laser deposition. An interesting phenomenon of loss-and-reappearance of the …
M Zhang, Q Qin, X Chen, R Tang, A Han, S Yao… - Ceramics …, 2022 - Elsevier
To address the challenge of memory wall, memristor is a breakthrough for the hardware realization of computation in memory (CIM). As a promising candidate for the resistive …
MP Zahler, SM Kraschewski, H Stoermer… - Journal of the European …, 2023 - Elsevier
In functional ceramics, the impact of dopants on bulk crystals is generally well understood. Their impact on grain boundaries is less well known. The present study investigates the …
N Ertekin, S Rezaee - Journal of Electronic Materials, 2023 - Springer
Resistive random-access memory (ReRAM) consists of memristor cells which are the ideal alternative to embedded flash memory technology. The development of ReRAMs is …
Emerging nonvolatile resistive switching, also known as the memristor, works with a distinct concept that relies mainly on the change in the composition of the active materials, rather …
The utilization of an in-plane lattice misfit in an oxide epitaxially grown on another oxide with a different lattice parameter is a well-known approach to induce strains in oxide materials …