The concept of direct band gap group IV materials may offer a paradigm change for Si-
photonics concerning the monolithic implementation of light emitters: the idea is to integrate …

Strained GeSn alloys are promising for realizing light emitters based entirely on group IV
elements. Here, we report GeSn microdisk lasers encapsulated with a SiN x stressor layer to …

The strong correlation between advancing the performance of Si microelectronics and their
demand of low power consumption requires new ways of data communication. Photonic …

Germanium has long been regarded as a promising laser material for silicon based opto-
electronics. It is CMOS-compatible and has a favourable band structure, which can be tuned …

The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the
key to the realization of fully functional photonic-integrated circuits. Despite several years of …

The success of GeSn alloys as active material for infrared lasers could pave the way toward
a monolithic technology that can be manufactured within mainstream silicon photonics …

GeSn alloys are nowadays considered as the most promising materials to build Group IV
laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible …

GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers
manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap …

We demonstrate a method to induce tensile and compressive strain into two-dimensional
transition metal dichalcogenide (TMDC) MoS 2 via the deposition of stressed thin films to …

Lately, germanium based materials attract a lot of interest as they can overcome some limits
inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red …