Physical properties and device applications of graphene oxide
Graphene oxide (GO), the functionalized graphene with oxygenated groups (mainly epoxy
and hydroxyl), has attracted resurgent interests in the past decade owing to its large surface …
and hydroxyl), has attracted resurgent interests in the past decade owing to its large surface …
Aligned carbon nanotube synaptic transistors for large-scale neuromorphic computing
This paper presents aligned carbon nanotube (CNT) synaptic transistors for large-scale
neuromorphic computing systems. The synaptic behavior of these devices is achieved via …
neuromorphic computing systems. The synaptic behavior of these devices is achieved via …
High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure
In this work, we study the high critical breakdown field in β-Ga 2 O 3 perpendicular to its
(100) crystal plane using a β-Ga 2 O 3/graphene vertical heterostructure. Measurements …
(100) crystal plane using a β-Ga 2 O 3/graphene vertical heterostructure. Measurements …
Band gap opening of metallic single-walled carbon nanotubes via noncovalent symmetry breaking
F Mastrocinque, G Bullard, JA Alatis… - Proceedings of the …, 2024 - National Acad Sciences
Covalent bonding interactions determine the energy–momentum (E–k) dispersion (band
structure) of solid-state materials. Here, we show that noncovalent interactions can modulate …
structure) of solid-state materials. Here, we show that noncovalent interactions can modulate …
Cryogenic characterization and analysis of nanoscale SOI FETs using a virtual source model
This article reports the temperature-dependent characterization and analysis of quasi-
ballistic transport in fully depleted silicon-on-insulator (FD-SOI) metal-oxide-semiconductor …
ballistic transport in fully depleted silicon-on-insulator (FD-SOI) metal-oxide-semiconductor …
Temperature-dependent transport in ultrathin black phosphorus field-effect transistors
We studied the temperature-dependent transport properties of ultrathin black phosphorus
(BP). We present measurements of BP Schottky barrier (SB) metal-oxide-semiconductor field …
(BP). We present measurements of BP Schottky barrier (SB) metal-oxide-semiconductor field …
Conductance quantization in nonvolatile resistive switching memory based on the polymer composite of zinc oxide nanoparticles
Y Sun, D Wen - The Journal of Physical Chemistry C, 2018 - ACS Publications
The composite of zinc oxide (ZnO) and polyurethane (PU) was used as an active layer. The
conductance quantization was demonstrated in nonvolatile resistive switching memory …
conductance quantization was demonstrated in nonvolatile resistive switching memory …
Effect of channel thickness on radiation hardness of solution-processed oxide thin film transistors
The effect of channel thickness on the radiation hardness of solution-processed amorphous
zinc–indium–tin–oxide (a-ZITO) thin film transistors (TFTs) with a Zn: In: Sn ratio of 4: 1: 1 …
zinc–indium–tin–oxide (a-ZITO) thin film transistors (TFTs) with a Zn: In: Sn ratio of 4: 1: 1 …
Transport properties and device prospects of ultrathin black phosphorus on hexagonal boron nitride
Black phosphorus (BP) has re-emerged as a promising layered material with significant
potential for future nanoelectronic applications. Several recent studies have demonstrated …
potential for future nanoelectronic applications. Several recent studies have demonstrated …
Electron mobility distribution in FD-SOI MOSFETs using a NEGF-Poisson approach
N DehdashtiAkhavan, GA Umana-Membreno, R Gu… - Solid-State …, 2022 - Elsevier
Modern electronic devices consist of several semiconductor layers where each layer
exhibits unique carrier transport properties that can be represented by a unique mobility …
exhibits unique carrier transport properties that can be represented by a unique mobility …