Self-consistent analysis of AlSb/InAs high electron mobility transistor structures
Y Li, Y Zhang, Y Zeng - Journal of Applied Physics, 2010 - pubs.aip.org
The influences of channel layer width, spacer layer width, and δ-doping density on the
electron density and its distribution in the AlSb/InAs high electron mobility transistors …
electron density and its distribution in the AlSb/InAs high electron mobility transistors …
A new extrinsic dc model for high speed lattice matched InAlAs/InGaAs/InP HEMT with a predicted 135 GHz cut-off frequency
Extrinsic lattice matched InAlAs/InGaAs/InP HEMT model, incorporating the parasitic source
and drain resistance, for very high frequency application is developed. The current voltage …
and drain resistance, for very high frequency application is developed. The current voltage …