Silicon carbide (SiC) is the most mature wide band-gap semiconductor and is currently
employed for the fabrication of high-efficiency power electronic devices, such as diodes and …

Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are
excellent materials for the next generation of high-power and high-frequency electronic …

In this work, we investigate the degree of incomplete ionization of Al doped 4H-SiC. In
particular, we perform analysis on a comprehensive list of published measurements of …

Electron mobility along <0001> and <1<img src="https://cdn.images.iop.org/Entities/overline1.gif"
alt="overline 1" align="baseline" />00> directions in 4H-SiC over a wide range of donor …

This study resumes the status of our knowledge about the formation of extended and
intrinsic defects in ion implanted 4H-SiC homo-epitaxial wafers during a high temperature …

The temperature dependencies of hole density and hole mobility of p-type 4H-SiC obtained
by Hall effect measurement were theoretically analyzed taking account of its anisotropic …

This work reports on the effect of high temperature annealing on the electrical properties of p-
type implanted 4H-SiC. Ion implantations of Aluminum (Al) at different energies (30–200 …

The p-type doping efficiency of 4H silicon carbide (4H-SiC) is rather low due to the large
ionization energies of p-type dopants. Such an issue impedes the exploration of the full …

We investigate the transition of the conduction mechanism from band and nearest-neighbor
hopping (NNH) conduction to variable-range hopping (VRH) conduction in heavily Al-doped …

The intrinsic carrier density of 4H-SiC at temperatures ranging from 294 to 595 K was
derived by analyzing a collector current in an npn-type SiC bipolar junction transistor, the …