Catastrophic optical damage (COD) of high power laser diodes is a crucial factor limiting
ultra high power lasers. The understanding of the COD process is essential to improve the …

Cross-sectional transmission electron microscopy studies often reveal a-type dislocations
located either below or above the interfaces in InGaN/GaN structures deposited along the …

The process of catastrophic optical damage (COD) in 9xx-nm laser diodes is typically
divided into three phases. In this work we model the first phase of COD by placing a …

Cathodoluminescence is a powerful technique for the characterization of semiconductors.
Due to its high spatial resolution, it is emerging as a suitable method for the study of …

Catastrophic optical damage (COD) is one of the processes limiting the lifetime of high-
power laser diodes. The understanding of this degradation phenomenon is critical to …

We measured the response of the facet temperature of the semiconductor laser to a single
pulse current with a magnitude of microseconds by using transient thermoreflection method …

This study investigates the relationship between thermal shocks on the surface of
semiconductor wafers and parameters of thermostimulated mechanical vibrations to develop …

GaAs photodiode arrays have been designed for non-destructive monitoring of x-ray beam
position in soft coherent beamline front ends in synchrotron light sources. A shallow p-on-n …

As an important part of the aircraft power system, the performance of aviation transformer
rectifier has a vital impact on the safety of the aircraft. Against the problem of performance …

In this work we show that elastic relaxation of lateral free surfaces of InGaN epilayer may
induce plastic deformation of adjacent GaN resulted in introduction of a-type dislocations …