Data intensive applications such as AI (Artificial Intelligence) and IoT (Internet of Things)
demand high performance and highly reliable non-volatile memories (NVM). FeFET offers …

In this study, we employed a sputtering process to construct a memristive device within the
ITO/ZrO x/TaN structure for implementing neuromorphic computing. Initially, we scanned the …

Recently, transistor scaling is approaching its physical limit, hindering the further
development of the computing capability. In the post-Moore era, emerging logic and storage …

Materials with field-tunable polarization are of broad interest to condensed matter sciences
and solid-state device technologies. Here, using hydrogen (H) donor doping, we modify the …

A full understanding of the impact of charge trapping on the memory window (MW) of HfO2-
based ferroelectric field effect transistors (FeFETs) will permit the design of program and …

Magnetic skyrmion technology is promising for the next-generation spintronics-based
memory and neuromorphic computing due to their small size, nonvolatility and low …

The recent discovery of ferroelectricity in pure ZrO2 has drawn much attention, but the
information storage and processing performances of ferroelectric ZrO2-based nonvolatile …

Ferroelectric field effect transistors (FeFETs) as artificial synapses have attracted great
interests in neuromorphic computing. To enable the applications, the electrical response of …

We investigate the impact of saturated spontaneous polarization (of the ferroelectric on
endurance fatigue of Si FeFET with Metal/Ferroelectric/Interlayer/Si (MFIS) gate structure …

The continuous effort in making artificial neural networks more alike to human brain calls for
the hardware elements to implement biological synapse-like functionalities. The recent …