The advance of semiconductor technology not only enables integrated circuits with higher
density and better performance but also increases their vulnerability to various aging …

Electromigration (EM) is a major failure effect for on-chip power grid networks of deep
submicron VLSI circuits. EM degradation of metal grid lines can lead to excessive voltage …

This article presents a fast full-chip electromigration (EM) aware IR drop constrained
optimization framework, named GridNetOpt, for on-chip power grid networks accelerated by …

In this article, we will present recent advances in VLSI reliability effects with a focus on
electromigration (EM) failure/aging effect on interconnects, which is one of the most …

This paper presents a new power grid network design and optimization technique that
considers the new EM immortality constraint due to EM void saturation volume for multi …

As semiconductor manufacturing technologies progress beyond the current 3nm, the
demand for more compact and powerful VLSI circuits obliges on-chip power grid networks to …

This paper presents a number of power grid network design and optimization techniques
that consider the electromigration (EM) effects for multi-segment interconnect wires. First, we …

Electromigration (EM) remains the primary failure mechanism for copper-based
interconnects in today's and future nanometer chip technologies. To ensure the longevity of …

As technology scales down to nanometres it severely affects the IR (Voltage) drop. Although
checking this problem in the earlier stages can speed up the analysis, not many tools are …

On-chip power supply or power-ground (P/G) networks provide power to the circuit modules
in a chip from external power supplies. Since power grid wires experience the largest …