Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

Abstract 2D van der Waals (vdW) materials have been considered as potential building
blocks for use in fundamental elements of electronic and optoelectronic devices, such as …

The effects of Al doping in atomic-layer-deposited HfO2 (AHO) and ZrO2 (AZO) films on the
evolutions of their crystallographic phases, grain sizes, and electric properties, such as their …

Tunnel field-effect transistors (TFETs) have extremely low leakage current, exhibit excellent
subthreshold swing, and are less susceptible to short-channel effects. However, TFETs do …

We report the growth of nanoscale hafnium dioxide (HfO2) and zirconium dioxide (ZrO2) thin
films using remote plasma-enhanced atomic layer deposition (PE-ALD), and the fabrication …

The optical quality Hf x Ti 1− x O 2 films with a wide range of the Hf/Ti ratio were prepared on
Si (100) substrates by the ALD method with the use of tetrakis (ethylmethylamido) hafnium …

In this paper, the poly-Si nanowire (NW) field-effect transistor (FET) sensor arrays were
fabricated by adopting low-temperature annealing (600° C/30 s) and feasible spacer image …

The atomic layer deposition (ALD) of a series of inorganic thin films on an interfacial organic
layer has been examined, focusing on the existence of a delay in thin film nucleation and its …

Due to its high dielectric constant, large band gap, and very small lattice mismatch with Si,
CeO2 has been proposed as a promising candidate high-κ dielectric material. The …

The thermal chemistry of tetrakis (ethylmethylamido) titanium (TEMAT) on (100)-oriented
surfaces of silicon wafers was studied by using infrared absorption and X-ray photoelectron …