Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
On‐demand reconfiguration of nanomaterials: when electronics meets ionics
Rapid advances in the semiconductor industry, driven largely by device scaling, are now
approaching fundamental physical limits and face severe power, performance, and cost …
approaching fundamental physical limits and face severe power, performance, and cost …
Boosting CO hydrogenation towards C2+ hydrocarbons over interfacial TiO2−x/Ni catalysts
Considerable attention has been drawn to tune the geometric and electronic structure of
interfacial catalysts via modulating strong metal-support interactions (SMSI). Herein, we …
interfacial catalysts via modulating strong metal-support interactions (SMSI). Herein, we …
Laser-assisted rapid synthesis of anatase/rutile TiO2 heterojunction with Function-specified micro-zones for the effective photo-oxidation of sulfamethoxazole
S Zhang, S Zhi, H Wang, J Guo, W Sun, L Zhang… - Chemical Engineering …, 2023 - Elsevier
A solid-state laser scanning treatment (SLST) was adopted to synthesize anatase/rutile TiO
2 heterojunction with effective charge carrier separation and high surface adsorption …
2 heterojunction with effective charge carrier separation and high surface adsorption …
Advances in resistive switching based memory devices
Among the emerging memories, resistive switching (RS) based resistive random-access
memories (RRAMs) are attracting lots of attention due to their simple metal–insulator–metal …
memories (RRAMs) are attracting lots of attention due to their simple metal–insulator–metal …
Interfacial interactions and their impact on redox-based resistive switching memories (ReRAMs)
I Valov - Semiconductor Science and Technology, 2017 - iopscience.iop.org
Redox-based resistive switching memories are nowadays one of the most studied systems
in both academia and industrial communities. These devices are scalable down to an almost …
in both academia and industrial communities. These devices are scalable down to an almost …
Emulating short-term synaptic dynamics with memristive devices
Neuromorphic architectures offer great promise for achieving computation capacities
beyond conventional Von Neumann machines. The essential elements for achieving this …
beyond conventional Von Neumann machines. The essential elements for achieving this …
Synergistic Hybrid Support Comprising TiO2–Carbon and Ordered PdNi Alloy for Direct Hydrogen Peroxide Synthesis
The development of high-activity catalysts with good selectivity for the direct synthesis of
H2O2 from H2 and O2 remains challenging. TiO2–C used as a support material is able to …
H2O2 from H2 and O2 remains challenging. TiO2–C used as a support material is able to …
Coexistence of analog and digital resistive switching in BiFeO3-based memristive devices
The resistive switching behavior of polycrystalline BiFeO 3 films was investigated, and the
coexistence of analog and digital resistive switching behaviors in a single Pt/BiFeO 3/Pt …
coexistence of analog and digital resistive switching behaviors in a single Pt/BiFeO 3/Pt …
Effect of Charge Injection on the Conducting Filament of Valence Change Anatase TiO2 Resistive Random Access Memory Device
The recent observation of stable quantized conductance in anatase TiO2 resistive random
access memory (ReRAM) devices opens up a new pathway toward the realization of brain …
access memory (ReRAM) devices opens up a new pathway toward the realization of brain …