The progress towards terahertz quantum cascade lasers on silicon substrates

DJ Paul - Laser & Photonics Reviews, 2010 - Wiley Online Library
A review is presented of work over the last 10 years which has been aimed at trying to
produce a Si‐based THz quantum cascade laser. Potential THz applications and present …

Optoelectronic device simulations based on macroscopic Maxwell–Bloch equations

C Jirauschek, M Riesch… - Advanced Theory and …, 2019 - Wiley Online Library
Due to their intuitiveness, flexibility, and relative numerical efficiency, the macroscopic
Maxwell–Bloch (MB) equations are a widely used semiclassical and semi …

Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions

T Grange, D Stark, G Scalari, J Faist… - Applied Physics …, 2019 - pubs.aip.org
n-type Ge/SiGe terahertz quantum cascade lasers are investigated using non-equilibrium
Green's functions calculations. We compare the temperature dependence of the terahertz …

Extended density-matrix model applied to silicon-based terahertz quantum cascade lasers

TV Dinh, A Valavanis, LJM Lever, Z Ikonić… - Physical Review B …, 2012 - APS
Silicon-based terahertz quantum cascade lasers (QCLs) offer potential advantages over
existing III-V devices. Although coherent electron transport effects are known to be important …

Material configurations for -type silicon-based terahertz quantum cascade lasers

A Valavanis, TV Dinh, LJM Lever, Z Ikonić… - Physical Review B …, 2011 - APS
Silicon-based quantum cascade lasers (QCLs) offer the prospect of integrating coherent
terahertz (THz) radiation sources with silicon microelectronics. Theoretical studies have …

[HTML][HTML] Combined resonant tunneling and rate equation modeling of terahertz quantum cascade lasers

Z Chen, A Liu, D Chang, S Dhillon, M Razeghi… - Journal of Applied …, 2024 - pubs.aip.org
Terahertz (THz) quantum cascade lasers (QCLs) are technologically important laser sources
for the THz range but are complex to model. An efficient extended rate equation model is …

Combined effect of electron and lattice temperatures on the long intersubband relaxation times of Ge/SixGe quantum wells

M Virgilio, M Ortolani, M Teich, S Winnerl, M Helm… - Physical Review B, 2014 - APS
In this paper, we have experimentally and numerically studied the nonradiative
intersubband (ISB) relaxation in n-type Ge/SiGe quantum well (QW) systems. Relaxation …

Si/SiGe quantum cascade superlattice designs for terahertz emission

G Matmon, DJ Paul, L Lever, M Califano… - Journal of Applied …, 2010 - pubs.aip.org
Quantum cascade lasers (QCLs) are compact sources that have demonstrated high output
powers at terahertz (THz) frequencies. To date, all THz QCLs have been realized in III-V …

Amplification of terahertz radiation on transitions between Wannier—Stark ladders in weak-barrier superlattices

AA Andronov, EP Dodin, DI Zinchenko… - Quantum …, 2010 - iopscience.iop.org
The experimental and numerical studies of the transport properties and wave functions of
electrons in GaAs/Al x Ga 1-x As superlattices with weak barriers in a strong electric field …

Modeling picosecond electron dynamics of pump-probe intersubband spectroscopy in n-type Ge/SiGe quantum wells

M Virgilio, G Grosso, G Pizzi, M De Seta… - Physical Review B …, 2012 - APS
We present an energy-balance model of the electronic intersubband relaxation in optically
excited n-type Ge/SiGe quantum wells with absorption resonance in the THz range. To this …