In this review article, we discuss the molecular beam epitaxy and basic structural, electronic,
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …

We overview recent progress in growth aspects of group III-nitride heterostructures for deep
ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth …

The space charge density profile of the nondoped AlGaN-based p-type cladding layer for UV-
C laser diodes realized by distributed polarization doping is examined theoretically and …

Microscale visible light emitting diodes (LEDs), as well as LEDs and laser diodes operating
in the mid and deep ultraviolet (UV), have emerged as the frontier of semiconductor …

We studied hole generation in Mg-doped AlN/Al 0.75 Ga 0.25 N superlattices (SLs) with an
average Al content of 0.8. High hole concentrations on the order of 10 18 cm− 3 were …

The hot-wall metal-organic chemical vapor deposition (MOCVD), previously shown to
enable superior III-nitride material quality and high performance devices, has been explored …

We have investigated gas-phase reactions driven by silane (SiH 4), which is the dopant
precursor in the metalorganic chemical vapor deposition (MOCVD) of aluminum nitride (AlN) …

The performance of AlGaN-based mid and deep ultraviolet light emitting diodes (LEDs) is
severely limited by electron overflow and by the poor hole injection into the device active …

Ultrawide bandgap semiconductors are important for a broad range of electronic and
photonic devices, but their practical application has been limited by poor current conduction …

Artificial photosynthesis is promising to convert solar energy and CO2 into valuable
chemicals, and to alleviate the problems of the greenhouse effect and the climate change …