Effective mass of electron in monolayer graphene: Electron-phonon interaction
Shubnikov-de Haas (SdH) and Hall effect measurements performed in a temperature range
between 1.8 and 275 K, at an electric field up to 35 kV m− 1 and magnetic fields up to 11 T …
between 1.8 and 275 K, at an electric field up to 35 kV m− 1 and magnetic fields up to 11 T …
Electron energy relaxation mechanism in n-type InxGa1-xAs1-yBiy alloys under electric and magnetic fields
We investigate the power loss per electron mechanism of hot electrons generated under
electric and magnetic fields in n-type In x Ga 1-x As 1-y Bi y epitaxial layers. Acoustic …
electric and magnetic fields in n-type In x Ga 1-x As 1-y Bi y epitaxial layers. Acoustic …
Investigation of the hall effect in rectangular quantum wells with a perpendicular magnetic field in the presence of a high-frequency electromagnetic wave
The Hall effect is theoretically studied in a rectangular quantum well (RQW) with infinite
barriers subjected to a crossed dc electric field and magnetic field (the magnetic field is …
barriers subjected to a crossed dc electric field and magnetic field (the magnetic field is …
Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures
SB Lisesivdin, N Balkan, O Makarovsky… - Journal of Applied …, 2009 - pubs.aip.org
This work describes Shubnikov–de Haas (SdH) measurements in Al 0.22 Ga 0.78
N/AlN/GaN/AlN heterostructures. Our experiments coupled with the analysis of the Hall data …
N/AlN/GaN/AlN heterostructures. Our experiments coupled with the analysis of the Hall data …
Hot electron energy relaxation via acoustic phonon emission in modulation-doped heterojunctions with double-subband occupancy
The energy relaxation associated with acoustic phonon emission in lattice-matched In 0.53
Ga 0.47 As/In 0.52 Al 0.48 As heterojunctions, has been investigated using Shubnikov-de …
Ga 0.47 As/In 0.52 Al 0.48 As heterojunctions, has been investigated using Shubnikov-de …
Determination of the in‐plane effective mass and quantum lifetime of 2D electrons in AlGaN/GaN based HEMTs
Magnetoresistance and Hall resistance measurements have been used to investigate the
electronic transport properties of AlGaN/GaN based HEMTs. The Shubnikov–de Haas (SdH) …
electronic transport properties of AlGaN/GaN based HEMTs. The Shubnikov–de Haas (SdH) …
Experimental determination of the subband electron effective mass in InGaAs/InAlAs HEMT-structures by the Shubnikov–de Haas effect at two temperatures
NA Yuzeeva, GB Galiev, EA Klimov, LN Oveshnikov… - Physics Procedia, 2015 - Elsevier
The electron effective masses m* in different dimensionally quantized subbands in
InGaAs/InAlAs HEMT-structures have been measured by the Shubnikov–de Haas effect at …
InGaAs/InAlAs HEMT-structures have been measured by the Shubnikov–de Haas effect at …
Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures
The two-dimensional (2D) electron energy relaxation in Al0. 25Ga0. 75N/AlN/GaN
heterostructures was investigated experimentally by using two experimental techniques; …
heterostructures was investigated experimentally by using two experimental techniques; …
Quantum lifetimes and momentum relaxation of electrons and holes in Ga0.7In0.3N0.015As0.985/GaAs quantum wells
Electronic transport in n-and p-type modulation-doped Ga0. 7In0. 3N0. 015As0. 985/GaAs
quantum wells are investigated using magneto-transport measurements in the temperature …
quantum wells are investigated using magneto-transport measurements in the temperature …
Hot electron energy relaxation via acoustic-phonon emission in GaAs/Ga1− xAlxAs multiple quantum wells: well-width dependence
H Celik, M Cankurtaran, N Balkan… - … science and technology, 2001 - iopscience.iop.org
The well-width dependence of the two-dimensional (2D) electron energy relaxation
associated with acoustic-phonon emission in GaAs/Ga 1− x Al x As multiple quantum wells …
associated with acoustic-phonon emission in GaAs/Ga 1− x Al x As multiple quantum wells …