The three-terminal quantum-well-light-emitting transistors (QW-LETs) possess appealing
characteristics, including multipath bidirectional electrical and optical inputs/outputs …

Dimensional and functional scaling 1 1 Functional Scaling: Suppose that a system has been
realized to execute a specific function in a given, currently available, technology. We say that …

The spontaneous emission recombination lifetime of carriers in the active region of transistor
lasers (TLs) is significantly reduced due to the accelerated carrier transport in the base …

In this paper, we use an analytical model to investigate the optoelectronic characteristics of a
double quantum well vertical cavity tunneling injection transistor laser. We particularly study …

Numerical analysis on the effect of number of quantum wells (QW) on the modulation and
distortion characteristics of 1300 nm Transistor Laser (TL) is reported. The terminal currents …

We present the first all-optical network, Baldur, to enable power-efficient and high-speed
communications in future exascale computing systems. The essence of Baldur is its ability to …

We report that a simple metal-AlGaN/GaN Schottky diode is capable of producing GaN band-
edge ultraviolet emission at 3.4 eV at a small forward bias larger than∼ 2 V at room …

Different than the Bardeen and Brattain transistor (1947) with the current gain depending on
the ratio of the base carrier spontaneous recombination lifetime to the emitter-collector …

The coherent photons generated at the base quantum wells in the transistor laser (TL)
interact with the collector field and “assist” electron tunneling from the valence band of the …

Optical absorption in a pn junction diode for a direct-gap semiconductor can be enhanced
by photon-assisted tunneling in the presence of a static or dynamic electrical field. In the …