Bottom-up nanofabrication by area-selective atomic layer deposition (ALD) is currently
gaining momentum in semiconductor processing, because of the increasing need for …

Atomic layer deposition (ALD) is a method that allows for the deposition of thin films with
atomic level control of the thickness and an excellent conformality on 3-dimensional …

This review provides an overview of area-selective thin film deposition (ASD) with a primary
focus on vapor-phase thin film formation via chemical vapor deposition (CVD) and atomic …

Atomic layer deposition (ALD) is a powerful tool for achieving atomic level control in the
deposition of thin films. However, several physical and chemical phenomena can occur …

Area-selective atomic layer deposition (AS-ALD) is a promising “bottom-up” alternative to
current nanopatterning techniques. Self-assembled monolayers (SAM) have been …

Atomic layer deposition (ALD) is a thin-film fabrication technique that has great potential in
nanofabrication. Based on its self-limiting surface reactions, ALD has excellent conformality …

Area-selective atomic layer deposition (ALD) is an approach to self-aligned, bottom-up
nanofabrication with the potential to overcome many of the challenges facing the …

Within its rich phase diagram titanium dioxide is a truly multifunctional material with a
property palette that has been shown to span from dielectric to transparent-conducting …

Area-selective atomic layer deposition (ALD) is envisioned to play a key role in next-
generation semiconductor processing and can also provide new opportunities in the field of …

The formation of the Ti–MoS2 interface, which is heavily utilized in nanoelectronic device
research, is studied by X-ray photoelectron spectroscopy. It is found that, if deposition under …