Investigation on palladium gate electrode-based SOI junctionless FET for hydrogen gas sensing
This study provides a comprehensive investigation on palladium (Pd) gate electrode-based
silicon on insulator (SOI) junctionless field-effect transistor (JLFET) for hydrogen gas (H 2) …
silicon on insulator (SOI) junctionless field-effect transistor (JLFET) for hydrogen gas (H 2) …
Characterizing parameter variations for enhanced performance and adaptability in 3ánmáMBCFET technology
M Rafiee, N Shiri, M Gharehkhani, AP Castellanos… - Microelectronics …, 2024 - Elsevier
With the continuous scaling down of semiconductor devices, traditional transistor
architectures face significant challenges in maintaining performance and power efficiency …
architectures face significant challenges in maintaining performance and power efficiency …
Mobility effects due to doping, temperature and interface traps in gate-all-around FinFETs
This article proposes a detailed investigation of the dependence of mobility on source
(S)/drain (D) doping concentrations, temperature and interface traps in two architectures of …
(S)/drain (D) doping concentrations, temperature and interface traps in two architectures of …
Photopolymerization of Hexa-2, 4-Diyne-1, 6-Diol as Prospective Technology of Graphene Nanoribbons Fabrication
F Podgornov, R Kanthapazham, SA Nayfert… - Available at SSRN … - papers.ssrn.com
Abstract The polymerized hexa-2, 4-diyne-1, 6-diol (DPA) could be considered as the
prospective material for fabrication of the graphene nanoribbons. It was revealed that DPA …
prospective material for fabrication of the graphene nanoribbons. It was revealed that DPA …