The correlation between the recombination dynamics of excitons and the internal quantum
efficiency (IQE) of AlGaN-based UV-A multiple quantum wells (MQWs) was studied via …

Based on our recent studies, we review our proposed experimental method for evaluating
internal quantum efficiency, which is a critical parameter for semiconductor light-emitting …

Carrier dynamics in AlGaN-based single quantum well (QW) structures grown on sapphire
are studied by means of time-integrated and time-resolved photoluminescence …

We investigate carrier localization in Al-rich AlGaN/AlN quantum well (QW) structures. Low
temperature time-resolved photoluminescence (PL) experiments reveal a strong variation of …

High density of defects and stress owing to the lattice and thermal mismatch between nitride
materials and heterogeneous substrates have always been important problems and limit the …

The carrier dynamics of Al‐rich AlGaN/AlN quantum well (QW) structures in the presence of
strong carrier localization is reported. Excitation density‐dependent photoluminescence (PL) …

Luminescence efficiency droop has been studied in AlGaN epitaxial layers and multiple
quantum wells (MQWs) with different strength of carrier localization in a wide range of …

To shift the emission band to long wavelength side, InGaN/GaN multiple quantum wells
were grown by metalorganic chemical vapor deposition (MOCVD) using pulsed delivery of …

Carrier localization is a phenomenon substantially affecting the carrier dynamics in AlGaN
epitaxial layers and quantum well structures. In this chapter, the origins of the carrier …