Memory isolation is a key property of a reliable and secure computing system--an access to
one memory address should not have unintended side effects on data stored in other …

This retrospective paper describes the RowHammer problem in dynamic random access
memory (DRAM), which was initially introduced by Kim et al. at the ISCA 2014 Conference …

As memory scales down to smaller technology nodes, new failure mechanisms emerge that
threaten its correct operation. If such failure mechanisms are not anticipated and corrected …

This paper presents a one-sided Schmitt-trigger-based 9T static random access memory cell
with low energy consumption and high read stability, write ability, and hold stability yields in …

This paper presents a technique for designing a low-power and variability-aware SRAM cell.
The cell achieves low power dissipation due to its series-connected tail transistor and read …

This book provides a guide to Static Random Access Memory (SRAM) bitcell design and
analysis to meet the nano-regime challenges for CMOS devices and emerging devices …

Space consists of high-energy particles and high-temperature fluctuations, which causes
single event upsets (SEUs). Conventional 6T static random access memory (SRAM) is …

This brief proposes a novel power-gated 9T (PG9T) static random access memory (SRAM)
cell that uses a read-decoupled access buffer and power-gating transistors to execute …

This paper presents a technique for designing a variability aware SRAM cell. The
architecture of the proposed cell is similar to the standard 6T SRAM cell with the exception …

Deep sub-micron memory devices play a crucial role in space electronic applications due to
their susceptibility to single-event upset and double-node upset types of soft errors. When a …