This paper reviews the most important properties of germanium, gives an insight into the
newer techniques and technology for the growth of epitaxial Ge thin layers and focuses on …

Results of investigations into surface processes of the formation of germanium and silicon
nanostructures are analyzed. A mechanism of three-dimensional island nucleation and …

We demonstrate that Ge can be selectively grown on Si (100) through openings in a SiO 2
nanotemplate by solid source molecular beam epitaxy. The selectivity relies on the thermal …

The solid-state dewetting phenomenon in Ge layers on SiO2 is investigated as a function of
layer thickness d Ge (from 10 to 86 nm) and annealing temperature. The dewetting is …

A method of forming a virtually defect free lattice mismatched nanoheteroepitaxial layer is
disclosed. The method includes forming an interface layer on a portion of a substrate. A …

In this study, a photobioelectrochemical sensor for the detection of sarcosine is reported. For
this purpose, CdSe/ZnS quantum dot (QD) modified electrodes are prepared and the oxygen …

The first observations of plastically deformed germanium made immediately clear that
dislocations introduced during a high-temperature deformation create acceptor states [1–5] …

We investigated the formation of Ge islands on Si (111) and Si (100) surfaces covered with
ultrathin SiO2 films as a function of the growth temperature, the Ge deposition rate, and the …

Создание полупроводниковых структур с новыми физическими свойствами является
основной задачей нанотехнологии, имеющей целью расширение пределов …

Germanium/silicon systems are among the most promising materials for development of
current semiconductor electronics and photonics. Structures with germanium quantum dots …