Review of semiconductor flash memory devices for material and process issues
Abstract Vertically integrated NAND (V‐NAND) flash memory is the main data storage in
modern handheld electronic devices, widening its share even in the data centers where …
modern handheld electronic devices, widening its share even in the data centers where …
Emerging memory technologies: Recent trends and prospects
This tutorial introduces the basics of emerging nonvolatile memory (NVM) technologies
including spin-transfer-torque magnetic random access memory (STTMRAM), phase …
including spin-transfer-torque magnetic random access memory (STTMRAM), phase …
4K-memristor analog-grade passive crossbar circuit
The superior density of passive analog-grade memristive crossbar circuits enables storing
large neural network models directly on specialized neuromorphic chips to avoid costly off …
large neural network models directly on specialized neuromorphic chips to avoid costly off …
Recent progress on 3D NAND flash technologies
A Goda - Electronics, 2021 - mdpi.com
Since 3D NAND was introduced to the industry with 24 layers, the areal density has been
successfully increased more than ten times, and has exceeded 10 Gb/mm2 with 176 layers …
successfully increased more than ten times, and has exceeded 10 Gb/mm2 with 176 layers …
3-D NAND technology achievements and future scaling perspectives
A Goda - IEEE Transactions on Electron Devices, 2020 - ieeexplore.ieee.org
Since the introduction of a 3-D NAND product in 2014, the areal density has increased by
more than 8 times (from 0.96 to 7.80 Gb/mm 2) in the recent five years. The increase of word …
more than 8 times (from 0.96 to 7.80 Gb/mm 2) in the recent five years. The increase of word …
Reviewing the evolution of the NAND flash technology
CM Compagnoni, A Goda, AS Spinelli… - Proceedings of the …, 2017 - ieeexplore.ieee.org
This paper reviews the recent historical trends of the NAND Flash technology, highlighting
the evolution of its main parameters and explaining what allowed it to become not only the …
the evolution of its main parameters and explaining what allowed it to become not only the …
A 512-Gb 3-b/cell 64-stacked WL 3-D-NAND flash memory
C Kim, DH Kim, W Jeong, HJ Kim… - IEEE Journal of Solid …, 2017 - ieeexplore.ieee.org
A 64-word-line-stacked 512-Gb 3-b/cell 3-D NAND flash memory is presented. After briefly
examining the challenges that occur to a stack, several technologies are suggested to …
examining the challenges that occur to a stack, several technologies are suggested to …
Improving 3D NAND flash memory lifetime by tolerating early retention loss and process variation
Compared to planar (ie, two-dimensional) NAND flash memory, 3D NAND flash memory
uses a new flash cell design, and vertically stacks dozens of silicon layers in a single chip …
uses a new flash cell design, and vertically stacks dozens of silicon layers in a single chip …
An overview of nonvolatile emerging memories—Spintronics for working memories
T Endoh, H Koike, S Ikeda, T Hanyu… - IEEE journal on …, 2016 - ieeexplore.ieee.org
This paper reviews emerging nonvolatile random access memories (RAM) in recent years. It
first benchmarks ferroelectric RAM (FeRAM), phase change RAM (PCRAM), resistive RAM …
first benchmarks ferroelectric RAM (FeRAM), phase change RAM (PCRAM), resistive RAM …
Architecture and process integration overview of 3D NAND flash technologies
In the past few decades, NAND flash memory has been one of the most successful
nonvolatile storage technologies, and it is commonly used in electronic devices because of …
nonvolatile storage technologies, and it is commonly used in electronic devices because of …