Recently developed high-permittivity (k) materials have reopened the door to Ge as a
channel material in metal-oxide-semiconductor field-effect transistors (MOSFETs). High-k/Ge …

6,808 004 B2 10/2004 Kamm et a1, 7,398,497 B2 7/2008 Sato et 31. 63083994 B1 10/2004
Wang 7,402,207 B1 7/2008 Besser et a1. 6,813,750 B2 11/2004 Usami et 31 ' 7,402,872 B2 …

Deeply Depleted Channel (DDC) design, allowing CMOS based devices to have a reduced
OV, compared to conven tional bulk CMOS and can allow the threshold voltage V of FETs …

An advanced transistor with punch through suppression includes a gate with length Lg, a
well doped to have a? rst concentration of a dopant, and a screening region positioned …

The first observations of plastically deformed germanium made immediately clear that
dislocations introduced during a high-temperature deformation create acceptor states [1–5] …

3,958.266 A 5, 1976 Athanas 4,000,504 A 12/1976 Berger 4,021,835 A 5, 1977 Etoh et al.
4,242,691 A 12/1980 Kotani et al. 4,276.095 A 6/1981 Beilstein, Jr. et al. 4,315,781 A 2f1982 …

(51) Int. Cl(57) ABSTRACT tion 21/8238 (2006.01) Semiconductor manufacturing processes
include forming HOIL 21/82(2006.015 conventional channel field effect transistors (FETs) …

Punch-through in a transistor device is reduced by forming a well layer in an implant region,
forming a stop layer in the well layer of lesser depth than the well layer, and forming a doped …

This work demonstrates the viability of direct fabrication utilizing a single (deposition/anneal)
process for polycrystalline silicon germanium sub-micro particles. The process combines …

A method of fabricating semiconductor devices includes pro viding a semiconducting
Substrate. The method also includes defining a heavily doped region at a surface of the …