[HTML][HTML] Temperature driven evolution of thermal, electrical, and optical properties of Ti–Al–N coatings

R Rachbauer, JJ Gengler, AA Voevodin, K Resch… - Acta materialia, 2012 - Elsevier
Monolithic single phase cubic (c) Ti1− xAlxN thin films are used in various industrial
applications due to their high thermal stability, which beneficially effects lifetime and …

[HTML][HTML] Nano-thermoelectric infrared bolometers

A Varpula, K Tappura, J Tiira, K Grigoras, OP Kilpi… - APL Photonics, 2021 - pubs.aip.org
Infrared (IR) radiation detectors are used in numerous applications from thermal imaging to
spectroscopic gas sensing. Obtaining high speed and sensitivity, low-power operation, and …

Thermal conductivity and mechanical properties of AlN-based thin films

V Moraes, H Riedl, R Rachbauer… - Journal of Applied …, 2016 - pubs.aip.org
While many research activities concentrate on mechanical properties and thermal stabilities
of protective thin films, only little is known about their thermal properties being essential for …

Considerations for an 8-inch wafer-level CMOS compatible AlN pyroelectric 5–14 μm wavelength IR detector towards miniature integrated photonics gas sensors

DKT Ng, G Wu, TT Zhang, L Xu, J Sun… - Journal of …, 2020 - ieeexplore.ieee.org
CMOS compatibility and 8-inch manufacturability have been highly desired in MEMS
technology. In this article, we demonstrate a MEMS pyroelectric IR detector using CMOS …

Pyroelectric and electrocaloric effects in ferroelectric silicon-doped hafnium oxide thin films

S Pandya, G Velarde, L Zhang, LW Martin - Physical Review Materials, 2018 - APS
The emergent ferroelectricity in HfO 2-based systems has attracted significant attention as
this simple binary high-k dielectric now offers the possibility of nonvolatile function. In this …

Influence of the nitrogen flow rate on the infrared emissivity of TiNx films

L Lu, F Luo, Z Huang, W Zhou, D Zhu - Infrared Physics & Technology, 2018 - Elsevier
TiN x films were deposited on glass substrates by DC reactive magnetron sputtering
technique. The influence of N 2 flow rates (1, 2, 4, and 20 sccm) on the structure, resistivity …

Stability of the nitrogen-deficient Ti2AlN x MAX phase in Ar2+-irradiated (Ti,Al)N/Ti2AlN x multilayers

M Bugnet, T Cabioc'h, V Mauchamp, P Guérin… - Journal of materials …, 2010 - Springer
The effects of 100 keV Ar 2+ ion irradiation on the structure and stability of multilayered dc
sputtered and annealed thin films of (Ti, Al) N/Ti 2 AlN x have been investigated with X-ray …

Analytical modelling of the transport in analog filamentary conductive-metal-oxide/HfO x ReRAM devices

DF Falcone, S Menzel, T Stecconi, M Galetta… - Nanoscale …, 2024 - pubs.rsc.org
The recent co-optimization of memristive technologies and programming algorithms enabled
neural networks training with in-memory computing systems. In this context, novel analog …

Modification and characterization of interfacial bonding for thermal management of ruthenium interconnects in next-generation very-large-scale integration circuits

T Zhan, K Sahara, H Takeuchi… - … Applied Materials & …, 2022 - ACS Publications
Ruthenium may replace copper interconnects in next-generation very-large-scale
integration (VLSI) circuits. However, interfacial bonding between Ru interconnect wires and …

[HTML][HTML] Colloidal Titanium Nitride Nanoparticles by Laser Ablation in Solvents for Plasmonic Applications

N Pliatsikas, S Panos, T Odutola, S Kassavetis… - Nanomaterials, 2024 - mdpi.com
Titanium nitride (TiN) is a candidate material for several plasmonic applications, and pulsed
laser ablation in liquids (PLAL) represents a rapid, scalable, and environmentally friendly …