M Uneda, N Kubo, M Hatatani, K Hotta… - Precision Engineering, 2023 - Elsevier
This study analyzed the material removal mechanism in chemical mechanical polishing (CMP) via in-situ observation using an evanescent field. In particular, the contact interface …
VT Nguyen, J Wait, T Nishi, S Hamada… - Journal of Manufacturing …, 2024 - Elsevier
As semiconductor devices become smaller, having ultra-smooth and flawless surfaces is crucial. The manufacturing of advanced devices requires strict conditions to avoid defects …
HJ Kim, M Rovereto - Microelectronic Engineering, 2022 - Elsevier
Abstract Chemical Mechanical Polishing (CMP) has been utilized for surface topography control and planarization since it was introduced in semiconductor fabrication. However, the …
Cleaning of surfaces polished with ceria particles is achieved using brush scrubbing. In the presence of additives like proline, this becomes more challenging. Here, we quantified the …
A Hosaka, Y Mizushima, S Hamada, R Koshino… - Microelectronic …, 2022 - Elsevier
The cleaning mechanism for brush scrubbing, known as the contact-type cleaning method, utilizes the direct contact of impurities onto brushes or brush-induced fluid flow depending …
P Khajornrungruang… - 2024 1st …, 2024 - ieeexplore.ieee.org
To directly investigate the dynamic nanoscale phenomenon on the surface being processed in wet conditions such as precision polishing, and cleaning in semiconductor industrial, an …
The use of polyvinyl acetal (PVA) brushes is one of the most effective and prominent techniques applied for the removal of chemical mechanical planarization (CMP) …
Chemical mechanical planarization (CMP) is the only process capable of achieving global planarization for both dielectric structures and metal interconnects that are integral parts of …
抄録 Droplet collision to the liquid film flow was observed experimentally. Liquid film flow was formed on the acrylic plate. Droplet with black ink was dropped on the liquid film flow …