Advanced sensing and machine learning technologies for intelligent measurement in smart and precision manufacturing

R Sato, K Li, M Michihata, S Takahashi… - International Journal of …, 2024 - jstage.jst.go.jp
This paper provides an overview of state-of-the-art sensing and machine learning
technologies for intelligent measurement in smart and precision manufacturing. Length …

Analysis of the material removal mechanism in chemical mechanical polishing with in-situ macroscale nonwoven pad contact interface observation using an …

M Uneda, N Kubo, M Hatatani, K Hotta… - Precision Engineering, 2023 - Elsevier
This study analyzed the material removal mechanism in chemical mechanical polishing
(CMP) via in-situ observation using an evanescent field. In particular, the contact interface …

Systematic root cause analysis of ceria-induced defects during chemical mechanical planarization and cleaning

VT Nguyen, J Wait, T Nishi, S Hamada… - Journal of Manufacturing …, 2024 - Elsevier
As semiconductor devices become smaller, having ultra-smooth and flawless surfaces is
crucial. The manufacturing of advanced devices requires strict conditions to avoid defects …

Effect of brush cleaning on defect generation in post copper CMP

HJ Kim, M Rovereto - Microelectronic Engineering, 2022 - Elsevier
Abstract Chemical Mechanical Polishing (CMP) has been utilized for surface topography
control and planarization since it was introduced in semiconductor fabrication. However, the …

Measurement of the force required to move ceria particles from SiO2 surfaces using lateral force microscopy

CK Ranaweera, SV Babu, S Hamada, J Seo - Journal of Materials …, 2022 - Springer
Cleaning of surfaces polished with ceria particles is achieved using brush scrubbing. In the
presence of additives like proline, this becomes more challenging. Here, we quantified the …

Static and dynamic interaction between polyvinyl acetal brushes and flat surfaces—Measuring near-surface brush volume ratio and nodule volume change for moving …

A Hosaka, Y Mizushima, S Hamada, R Koshino… - Microelectronic …, 2022 - Elsevier
The cleaning mechanism for brush scrubbing, known as the contact-type cleaning method,
utilizes the direct contact of impurities onto brushes or brush-induced fluid flow depending …

Optical Evanescent Field for Direct Observation of Sub-100nm Particle Motion on Glass Surface

P Khajornrungruang… - 2024 1st …, 2024 - ieeexplore.ieee.org
To directly investigate the dynamic nanoscale phenomenon on the surface being processed
in wet conditions such as precision polishing, and cleaning in semiconductor industrial, an …

Effect of Skin Layer on Brush Loading, Cross-Contamination, and Cleaning Performance during Post-CMP Cleaning

S Sahir, HW Cho, P Jalalzai, J Peter… - ECS Journal of Solid …, 2022 - iopscience.iop.org
The use of polyvinyl acetal (PVA) brushes is one of the most effective and prominent
techniques applied for the removal of chemical mechanical planarization (CMP) …

Chemical Mechanical Polishing of Cobalt and Post-CMP Cleaning of Silica and Ceria Particles

CKRA Gamaralalage - 2021 - search.proquest.com
Chemical mechanical planarization (CMP) is the only process capable of achieving global
planarization for both dielectric structures and metal interconnects that are integral parts of …

ウェーハ洗浄時を模擬した液膜流れに衝突する液滴挙動に関する研究

藤嶋紘輝, 矢野絢子, 天谷賢児, 檜山浩國… - … 総会講演会講演論文集 …, 2022 - jstage.jst.go.jp
抄録 Droplet collision to the liquid film flow was observed experimentally. Liquid film flow
was formed on the acrylic plate. Droplet with black ink was dropped on the liquid film flow …