[图书][B] Semiconductor lithography: principles, practices, and materials

WM Moreau - 2012 - books.google.com
Semiconductor lithography is one of the key steps in the manufacturing of integrated silicon-
based circuits. In fabricating a semiconductor device such as a transistor, a series of hot …

Field-emitter arrays for vacuum microelectronics

CA Spindt, CE Holland, A Rosengreen… - IEEE Transactions on …, 1991 - ieeexplore.ieee.org
An ongoing program on microfabricated field-emitter arrays has produced a gated field-
emitter tip structure with submicrometer dimensions and techniques for fabricating emitter …

Vacuum microelectronics

I Brodie, CA Spindt - Advances in electronics and electron physics, 1992 - Elsevier
Publisher Summary This chapter focuses on vacuum microelectronics—a branch of subject
in which devices with tolerances in the nanometer range rely on the collision-free motion of …

Characterization and application of materials grown by electron-beam-induced deposition

HWP Koops, J Kretz, M Rudolph… - Japanese journal of …, 1994 - iopscience.iop.org
Electron-beam-induced deposition of materials has been known for almost 40 years from
contamination writing. It has developed into" additive lithography" with nanometer resolution …

[图书][B] Modern Developments in Vacuum Electron Sources

G Gaertner, W Knapp, RG Forbes - 2020 - Springer
During the historical development of Vacuum Electronics a lot of review articles and also
several more extensive textbooks have been written on vacuum electron sources, reflecting …

Electron-beam-induced deposition with carbon nanotube emitters

L Dong, F Arai, T Fukuda - Applied Physics Letters, 2002 - pubs.aip.org
Electron-beam-induced deposition (EBID) is performed with multiwalled carbon nanotube
emitters that are assembled to atomic force microscope cantilevers through nanorobotic …

Aberration calculation of microlens array using differential algebraic method

J Hu, L Yue, Y Ma, F Liu, Y Kang - Ultramicroscopy, 2024 - Elsevier
Microlens array (MLA), through which all the sub-beams are focused, is widely used in multi-
electron-beam systems. In this work, based on the differential algebraic (DA) method, we …

Pattern inspection apparatus and electron beam apparatus

I Honjo, K Sugishima, M Yamabe - US Patent 5,430,292, 1995 - Google Patents
A pattern inspection apparatus is designed to quickly and accurately perform an inspection
of an inspecting sample, such as masks, wafers or so forth by irradiating electron beams …

Pattern inspection apparatus and electron beam apparatus

I Honjo, K Sugishima, M Yamabe - US Patent 5,557,105, 1996 - Google Patents
57 ABSTRACT A pattern inspection apparatus is designed to quickly and accurately perform
an inspection of an inspection sample, such as a mask or a wafer or the like by irradiating …

Recent progress in low-voltage field-emission cathode development

CA Spindt, CE Holland… - Le Journal de …, 1984 - jphyscol.journaldephysique.org
Résumé Nos récents progrès dans le développement de réseaux de cathodes à émission
de champ ont permis d'atteindre des densités de courant supérieures à 100 A/cm 2. Abstract …