Polishing compositions and methods for removing conduc tive materials and barrier
materials from a substrate surface are provided. Polishing compositions are provided for …

(57) ABSTRACT A composition and associated method for chemical mechanical
planarization (or other polishing) are described which afford high tantalum to copper …

The invention includes a method of forming a planarized surface over a semiconductor
substrate. A substrate is provided which includes a memory array region and a peripheral …

The present invention provides a substrate processing method that can perform improved
flattening and processing upon the formation of interconnects. The a substrate processing …

Semiconductor material substrates are polished by a method including at least one
polishing step A by means of which the substrate is polished on a polishing pad containing …

Provided are materials and methods for the chemical mechanical planarization of material
layers using a down force of less than about 2.5 psi while maintaining a material removal …

(57) ABSTRACT A method of manufacturing a semiconductor device, includes:(a) obtaining
a Surface of apolishing target, wherein an insulating film and a metal film are exposed; and …

Embodiments of the invention provide a slurry delivery and rinse system for a chemical
mechanical polishing (CMP) apparatus which is capable of self-cleaning, and which can …

A polishing slurry can include zirconia particles. The polishing slurry can be used to polish
conductive and insulating materials, and is particularly well suited for polishing oxide …

H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic
radiation of shorter wavelength or corpuscular radiation and specially adapted either for the …