There is a growing interest in high-density plasma processing in both the semiconductor and
the magnetic thin film head industry. 1-7 In particular, much research has been conducted …

In this work, SiO 2/GaN MOS structures have been fabricated using Electron Cyclotron
Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PECVD) for deposition of …

It is presented the effect of the reactive and non-reactive sputtering preparation, as well as,
the atomic composition on the electrical properties and conduction mechanisms. Depending …

Silicon nitride has excellent properties as a refractory material. Crystalline Si3N4 ceramics
exhibit stability at high temperatures, high electrical resistivity and extreme hardness. On the …

We report here on internal stress variations in SiN x films deposited on silicon by plasma
enhanced chemical vapor deposition-electron cyclotron resonance (PECVD-ECR) plasma …

We have studied the effect of reactive and nonreactive sputtering preparations on the
composition and properties of silicon nitride thin films. Films were prepared from both silicon …

In this research, the use of ZnO thin films, as anti-reflective layers of solar cells, is presented.
The thin films were synthesized through a sol–gel method and then deposited on a P–N …

Silicon nitride thin films have been prepared at room temperature by RF reactive and non-
reactive sputtering over several substrates. Pure silicon and high-density ceramic β-Si3N4 …

(57) ABSTRACT A method for forming edge-defined Structures with Sub lithographic
dimensions which are used to further form conduction channels and/or Storage Structures in …

Amorphous hydrogenated silicon nitride films have been deposited by the electron cyclotron
resonance plasma technique, using N 2 and SiH 4 as precursor gases. The gas flow ratio …