Electro-thermal characteristics of junctionless nanowire gate-all-around transistors using compact thermal conductivity model
The electrothermal performance of a junctionless nanowire [JL-nanowire (NW)] gate-all-
around (GAA) transistors under self-heating effect (SHE) is examined for sub-5 nm …
around (GAA) transistors under self-heating effect (SHE) is examined for sub-5 nm …
Thermal conductivity model to analyze the thermal implications in nanowire FETs
In this article, a thermal conductivity () model is proposed (ie, dependent on the temperature,
thickness, and doping concentration) for investigating the thermal behavior of silicon-on …
thickness, and doping concentration) for investigating the thermal behavior of silicon-on …
Self-heating mapping of the experimental device and its optimization in advance sub-5nm node junctionless multi-nanowire FETs
The junctionless multi-nanowire (JL-MNW) gate-all-around (GAA) field-effect transistor (FET)
has become an emerging device in the advanced node of modern semiconductor devices …
has become an emerging device in the advanced node of modern semiconductor devices …
Electro-thermal properties and self-heating effect in multi-nanosheet FETs: junctionless mode versus inversion mode
Overall electro-thermal performance is optimized and analyzed in terms of lattice
temperature, thermal resistance, and delay time by varying the device active area …
temperature, thermal resistance, and delay time by varying the device active area …
Tunable photo-response in the visible to NIR spectrum range of Germanium-based junctionless nanowire transistor
In this paper, the phototransistor behavior is investigated in the germanium-on-insulator
(GeOI)-based junctionless nanowire (JL-NW) transistor under various light conditions. High …
(GeOI)-based junctionless nanowire (JL-NW) transistor under various light conditions. High …
Numerical simulation of core shell dual metal gate stack junctionless accumulation mode nanowire FET (CS-DM-GS-JAMNWFET) for low power digital applications
S Rewari, N Pandey - Micro and Nanostructures, 2024 - Elsevier
Abstract In this paper, Core Shell Dual Metal Gate Stack Junctionless Accumulation Mode
Nanowire FET (CS-DM-GS-JAMNWFET) is proposed, which has enhanced performance …
Nanowire FET (CS-DM-GS-JAMNWFET) is proposed, which has enhanced performance …
Device parameter prediction for GAA junctionless nanowire FET using ANN approach
The primary objective of this study is to investigate the potential of artificial neural network
(ANN) for predicting the short-channel effect parameters and current-voltage curve in gate …
(ANN) for predicting the short-channel effect parameters and current-voltage curve in gate …
Modeling of inner-outer gates and temperature dependent gate-induced drain leakage current of junctionless double-gate-all-around FET
In this paper, the temperature-dependent gate-induced drain leakage (GIDL) current model
is proposed with the help of a lateral electric field (EL) across the inner and outer gate …
is proposed with the help of a lateral electric field (EL) across the inner and outer gate …
Piezoresistive sensitivity enhancement below threshold voltage in sub-5 nm node using junctionless multi-nanosheet FETs
In this paper, the piezoresistive sensitivity is enhanced by applying uniform mechanical
stress (MS) on the multi-nanosheet (NS) channels of sub-5 nm junctionless field-effect …
stress (MS) on the multi-nanosheet (NS) channels of sub-5 nm junctionless field-effect …
The investigation of gate oxide and temperature changes on electrostatic and Analog/RF and behaviour of nanotube junctionless double-gate-all around (NJL-DGAA) …
Abstract Nanotube Junction-less Double-Gate-All-Around (NJL-DGAA) MOSFETs using Si
nanomaterials or nano particle emerged as an appealing option for the design of high …
nanomaterials or nano particle emerged as an appealing option for the design of high …