Status and prospects of ZnO-based resistive switching memory devices
In the advancement of the semiconductor device technology, ZnO could be a prospective
alternative than the other metal oxides for its versatility and huge applications in different …
alternative than the other metal oxides for its versatility and huge applications in different …
Oxide-based resistive switching-based devices: fabrication, influence parameters and applications
In advanced computing technologies, metal oxide-based resistive switching random access
memory (RRAM) has been considered an excellent scientific research interest in the areas …
memory (RRAM) has been considered an excellent scientific research interest in the areas …
Vertically integrated ZnO-Based 1D1R structure for resistive switching
We report a ZnO-based 1D1R structure, which is formed by a vertical integration of a
FeZnO/MgO switching resistor (1R) and an Ag/MgZnO Schottky diode (1D). The …
FeZnO/MgO switching resistor (1R) and an Ag/MgZnO Schottky diode (1D). The …
Resistive Switching Characteristics of Alloyed AlSiOx Insulator for Neuromorphic Devices
Y Lee, J Jang, B Jeon, K Lee, D Chung, S Kim - Materials, 2022 - mdpi.com
Charge-based memories, such as NAND flash and dynamic random-access memory
(DRAM), have reached scaling limits and various next-generation memories are being …
(DRAM), have reached scaling limits and various next-generation memories are being …
Ink-jet printed transparent and flexible electrodes based on silver nanoparticles
In recent, silver (Ag) nanowires (NWs) have received much attention as an alternative to
indium tin oxide (ITO) for transparent electrode application in printed and transparent …
indium tin oxide (ITO) for transparent electrode application in printed and transparent …
Forming free bipolar ReRAM of Ag/a-IGZO/Pt with improved resistive switching uniformity through controlling oxygen partial pressure
Y Pei, B Mai, X Zhang, R Hu, Y Li, Z Chen… - Journal of Electronic …, 2015 - Springer
Bipolar resistive switching properties of Ag/a-IGZO/Pt structure resistive random-access
memories (ReRAMs) were investigated. The amorphous In-Ga-Zn-O (a-IGZO) films were …
memories (ReRAMs) were investigated. The amorphous In-Ga-Zn-O (a-IGZO) films were …
Localized resistive switching in a ZnS–Ag/ZnS double-layer memory
Bipolar resistive-switching memories were demonstrated based on a Ag/ZnS/ITO stack
structure, where the electrolyte layer is made into a double-layer structure composed of a Ag …
structure, where the electrolyte layer is made into a double-layer structure composed of a Ag …
Characterization and Corrosion Behavior of Electrodeposited Binary and Ternary Nickel Alloys in a CO2-Saturated NaCl Solution
AA Rodriguez, J Tylczak, M Ziomek-Moroz… - NACE …, 2019 - onepetro.org
ABSTRACT Binary (Ni-Cr and Ni-Zn), and ternary (Ni-Co-Cr) Ni-based alloy coatings were
electrodeposited on carbon steel 1018 (UNS G10180). These metallic coatings are being …
electrodeposited on carbon steel 1018 (UNS G10180). These metallic coatings are being …
Switching and synaptic characteristics of AZO/ZnO/ITO valence change memory device
FM Simanjuntak, S Chandrasekaran… - IOP Conference …, 2019 - iopscience.iop.org
This paper reports the resistive switching and synaptic capability of AZO/ZnO/ITO
transparent and flexiblevalence change memory device structure. The device performs …
transparent and flexiblevalence change memory device structure. The device performs …
[PDF][PDF] Resistive Switching Characteristics of Alloyed AlSiOx Insulator for Neuromorphic Devices. Materials 2022, 15, 7520
Y Lee, J Jang, B Jeon, K Lee, D Chung, S Kim - 2022 - pdfs.semanticscholar.org
Charge-based memories, such as NAND flash and dynamic random-access memory
(DRAM), have reached scaling limits and various next-generation memories are being …
(DRAM), have reached scaling limits and various next-generation memories are being …