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An improved field effect transistor formed in the Group III nitride material system includes a
two part structure in which a chemical vapor deposited passivation layer of silicon nitride …

The present invention provides a device, test cards, methods and kits which are useful for
determining the particle fraction and rate of Viscosity of a fluid sample, the presence of an …

(57) ABSTRACT A field effect transistor (FET) includes a plurality of trenches extending into
a semiconductor region. Each trench includes a gate electrode and a shield electrode with …

US 2006/0255423 A1 Nov. 16, 2006 (57) ABSTRACT (51) Int. Cl. H011, 29/47(200601)
Integral structures that block the current conduction of the H01L 29/8 72(200601) built-in PiN …

A power MOSFET includes a semiconductor substrate having a drift region therein and first
and second transition regions of first conductivity type that extend between the drift region …

Edge termination for silicon carbide devices has a plurality of concentric floating guard rings
in a silicon carbide layer that are adjacent and spaced apart from a silicon carbide based …

(57) ABSTRACT A handheld diagnostic test device includes a port to remov ably receive a
test cartridge, an element connected with an electronic device, and sensors for detection of …

(57) ABSTRACT A Schottky diode is disclosed that includes a silicon carbide substrate, a
silicon carbide drift layer, a Schottky contact, and a passivation structure. The silicon carbide …

BACKGROUND Most conventional semiconductor power transistors are almost exclusively
formed using silicon (Si). Due to the rela tive maturity of the use of this semiconductor, the …