High efficiency micro-LEDs, with lateral dimensions as small as one micrometer, are desired
for next-generation displays, virtual/augmented reality, and ultrahigh-speed optical …

The physics of carrier recombinations in III-nitride light emitters are reviewed, with an
emphasis on experimental investigations. After a discussion of various methods of …

Herein, we have investigated the tunability of the photoluminescence (PL) of the monolayer
MoS2 (1L-MoS2) by decorating it with WS2 quantum dots (WS2 QD). The direct bandgap 1L …

Crystallographic point defects (PDs) can dramatically decrease the efficiency of
optoelectronic semiconductor devices, many of which are based on quantum well (QW) …

Transparent conducting oxides, such as doped indium oxide, zinc oxide, and cadmium
oxide (CdO), have recently attracted attention as tailorable materials for applications in …

GaN-based microdisk laser on Si can be adopted as an efficient on-chip laser source for Si
photonics. However, most of the reported microdisk lasers are integrated on Si (111), which …

As a promising high mobility p-type wide bandgap semiconductor, copper iodide has
received increasing attention in recent years. However, the defect physics/evolution are still …

Photoluminescence measurements on high-quality (In, Ga) N quantum wells reveal that
carriers diffuse laterally to long distances at room temperature, up to tens of microns. This …

Excitons in InGaN quantum wells are investigated numerically, considering random alloy
disorder and Coulomb interaction on equal footing in the Schrödinger equation. Their …

To target mitigation of anti-site defect formation in Cu2ZnSnS4− xSex, a new class of
chalcogenides, for which Ba or Sr (group 2) replace Zn (group 12), has recently been …