Gallium nitride–based photodiode: a review
Abstract This paper shows Gallium Nitride material based photodiode as an overview to use
it with different layer thickness in order to detect multi-spectral ranges and to obtain high …
it with different layer thickness in order to detect multi-spectral ranges and to obtain high …
On‐Chip Light–Atom Interactions: Physics and Applications
W Wang, Y Xu, Z Chai - Advanced Photonics Research, 2022 - Wiley Online Library
The large volumes induced by complex free‐space optical paths pose a challenge to
quantum precision measurement and optical communication in traditional optics …
quantum precision measurement and optical communication in traditional optics …
Preparation and characterization of UV-enhanced GaN/porous Si photodetector using PLA in liquid
The photoluminescence and optoelectronics properties are very important for gallium nitride
(GaN) nanoparticles in the applications of ultraviolet and blue optoelectronic devices. In this …
(GaN) nanoparticles in the applications of ultraviolet and blue optoelectronic devices. In this …
[HTML][HTML] Preparation of GaN/Porous silicon heterojunction photodetector by laser deposition technique
In this work, gallium nitride (GaN) thin film was deposited on porous silicon (PSi) substrate
via a pulsed laser deposition route with a 355 nm laser wavelength, 900 mJ of laser energy …
via a pulsed laser deposition route with a 355 nm laser wavelength, 900 mJ of laser energy …
Theoretical study of a pure LinbO3/Quartz waveguide coated gold nanorods using supercontinuum laser source
In this study, we explore by simulation the dependency of the LinbO 3/Quartz on the
waveguide design for filter and sensor applications using COMSOL multi-physics 4.4. LinbO …
waveguide design for filter and sensor applications using COMSOL multi-physics 4.4. LinbO …
Synthesis gallium nitride on porous silicon nano-structure for optoelectronics devices
The structure of gallium nitride (GaN) on porous silicon (psi) substrate was fabricated by
depositing high purity of 99.9% GaN on psi substrate using pulsed laser deposition method …
depositing high purity of 99.9% GaN on psi substrate using pulsed laser deposition method …
Electrical conductivity inversion for Nb2O5 nanostructure thin films at different temperatures
The effect of treatment temperature on structural, morphological, and electrical properties of
Nb 2 O 5 thin films using the precipitation method is presented in this work. Clear …
Nb 2 O 5 thin films using the precipitation method is presented in this work. Clear …
An investigation on GaN/porous-Si NO2 gas sensor fabricated by pulsed laser ablation in liquid
Pulsed-laser ablation in liquid was used to prepare GaN nanostructure. The P-type GaN
nanostructure was deposited onto the porous-silicon substrate through the drop-casting …
nanostructure was deposited onto the porous-silicon substrate through the drop-casting …
[HTML][HTML] Mesoporous Ag@WO3 core–shell, an investigation at different concentrated environment employing laser ablation in liquid
In this study, silver-tungsten oxide core–shell nanoparticles (Ag–WO3 NPs) were
synthesized by pulsed laser ablation in liquid employing a (1.06 µm) Q-switched Nd: YAG …
synthesized by pulsed laser ablation in liquid employing a (1.06 µm) Q-switched Nd: YAG …
Effect of gate dielectric thicknesses on MOS photodiode performance and electrical properties
ET Salim, AI Hassan, SA Naaes - Materials Research Express, 2019 - iopscience.iop.org
Different film thickness was used to investigate the effect of the Al 2 O 3 as a dielectric
material for the fabrication of Al/AL 2 O 3/Si/Al MOS diode. Chemical spray pyrolysis method …
material for the fabrication of Al/AL 2 O 3/Si/Al MOS diode. Chemical spray pyrolysis method …