G Ortiz, J Biela, D Bortis… - The 2010 International …, 2010 - ieeexplore.ieee.org
The design of a 1 MW, 20 kHz, isolated, bidirectional 12kV to 1.2 kV DC-DC converter for renewable energy applications is presented. The main topics addressed are: High-Voltage …
To utilize the power generated from renewable energy sources and use it in stand-alone or grid integrated application, power conditioning unit (PCU) is required. The main …
DY Jung, YH Ji, SH Park, YC Jung… - IEEE transactions on …, 2010 - ieeexplore.ieee.org
In this paper, a interleaved soft switching boost converter (ISSBC) for a photovoltaic (PV) power-generation system is proposed. The topology used raises the efficiency for the dc/dc …
Ertl, H., Kolar, JW and Zach, FC, 2002. A novel multicell dc-ac converter for applications in renewable energy systems, IEEE Trans actions on Industrial Electronics, pp. 1048-1057 …
E Chu, X Hou, H Zhang, M Wu… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
In this paper, a novel zero-voltage and zero-current switching (ZVZCS) pulsewidth modulation (PWM) half-bridge (HB) three-level (TL) dc/dc converter is proposed. Compared …
YC Lim, SO Wi, JN Kim, YG Jung - IEEE Transactions on Power …, 2009 - ieeexplore.ieee.org
This paper describes a pseudorandom carrier modulation scheme and its harmonic spectra spread effect. The pseudorandom carrier of the proposed scheme are produced through the …
P Ranstad, HP Nee - IEEE Transactions on Power Electronics, 2010 - ieeexplore.ieee.org
Two different dynamic effects influencing the insulated gate bipolar transistor (IGBT) losses in soft-switching converters are demonstrated. The first one, the Dynamic tail-charge effect …
F Jin, F Liu, X Ruan, X Meng - 2014 IEEE Energy Conversion …, 2014 - ieeexplore.ieee.org
To satisfy the requirement for high voltage and high power applications, a multi-phase multi- level LLC resonant converter with modular structure was proposed in this paper. The voltage …
P Ranstad, HP Nee, J Linner… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
Soft-switching converters equipped with insulated gate bipolar transistors (IGBTs) in silicon (Si) have to be dimensioned with respect to additional losses due to the dynamic conduction …