In this study, a method for determining the intrinsic recombination velocity at the junction of a
silicon solar cell is presented. The expression of intrinsic recombination velocity at the …

The objective of this paper is to estimate the values of five parameters ($ A $, $ R_ {se} $, $
R_ {sh} $, $ I_ {LG} $, and $ I_ {sat}) $ of a PV module more accurately and to extract the …

The influence of the illumination wavelength on the electrical parameters of a vertical
parallel junction silicon solar cell by its rear side is theoretically analyzed. Based on the …

The silicon solar cell with series-connected vertical junction is studied with different lamella
widths—the expression of the ac recombination velocity of the excess minority carrier at the …

The ac recombination velocity of the excess minority carriers, in the back surface of a silicon
solar cell with a vertical junction connected in series, is developed through Einstein's law …

This work deals with determining the optimum thickness of the lamella wafer of silicon solar
cell. The (p) base region makes up the bulk of the thickness of the wafer. This thickness has …

The aim of this study is to show the influence of the wavelength on the electrical parameters
of vertical parallel junction silicon solar cell by use of impedance spectroscopy technique …

The aim of this work is to present a theoretical study of a vertical junction silicon solar cell
under monochromatic illumination. By solving the continuity equation and using a one …

The minority carrier's recombination velocity at the junction and at the back surface is used
for the modeling and determination of the optimum thickness of the base of a silicon solar …

The effect of incidence angle on the electrical parameters of vertical parallel silicon solar cell
under frequency domain was theoretically analyzed. Based on the diffusion-recombination …