In this study, the binding energies of an on-center and off-center hydrogenic donor impurity
in a spherical quantum dot with finite confinement potential under an applied external …

Heteroepitaxy of III–V compound semiconductors on industry standard (001) silicon (Si)
substrates is highly desirable for large-scale electronic and photonic integrated circuits …

Electrically pumped on-chip C-band lasers provide additional flexibility for silicon photonics
in the design of optoelectronic circuits. III–V quantum dots, benefiting from their superior …

We have developed InP-based 1.55-μm lasers epitaxially grown on (001) Si substrates for
photonics integration. To overcome the fundamental material challenges associated with …

Monolithic integration of high-performance semiconductor lasers on silicon enables wafer-
scale optical interconnects within photonic integrated circuits on a silicon manufacturing …

We report the effects of multi-layer InAs/InAlGaAs quantum dots (QDs) inserted as
dislocation filters into an InP thin film epitaxially grown on (001) Si substrates by …

Uniform quantum dots (QDs) with a narrowed linewidth of photoluminescence (PL) are
crucial for developing high-performance QD lasers. This study focuses on optimizing the …

Monolithic integration of InP on a Si platform ideally facilitates on-chip light sources in silicon
photonic applications. In addition to the well-developed hybrid bonding techniques, the …

InAs/InAlGaAs quantum dot active layers within microcavity resonators offer the potential of
ultra-low-threshold lasing in the 1.55 μm telecom window. Here, we demonstrate the first …

We report the effect of growth interruptions on the structural and optical properties of
InAs/InAlGaAs/InP quantum dots using molecular beam epitaxy. We find that the surface …