Developments and applications of tunneling magnetoresistance sensors

S Yan, Z Zhou, Y Yang, Q Leng… - Tsinghua Science and …, 2021 - ieeexplore.ieee.org
Magnetic sensors based on tunneling magnetoresistance (TMR) effect exhibit high
sensitivity, small size, and low power consumption. They have gained a lot of attention and …

Synthesis of Fe3O4 at different reaction temperatures and investigation of its magnetic properties on giant magnetoresistance (GMR) sensors for bio-detection …

G Antarnusa, A Esmawan, PD Jayanti… - Journal of Magnetism …, 2022 - Elsevier
Abstract Magnetite (Fe 3 O 4) nanoparticles with different reaction temperatures (TR= 40, 60
and 80° C) for the application of bio-detection have been successfully synthesized using the …

Perpendicular magnetic anisotropy based spintronics devices in Pt/Co stacks under different hard and flexible substrates

S Eimer, H Cheng, J Li, X Zhang, C Zhao… - Science China Information …, 2023 - Springer
The magnetic properties in substrate/Pt/Co multilayers, such as perpendicular magnetic
anisotropy (PMA), are of particular interest for spintronic devices. In particular, it is important …

Non-orthogonal two-step annealing method for linearized magnetic tunnel junction sensors

X Zhang, M Pan, S Lei, M Ji, Y Hu, J Hu, D Chen… - Applied Physics …, 2024 - pubs.aip.org
The orthogonal two-step annealing process is an effective strategy to linearize the response
of magnetic tunnel junctions for magnetic field sensors. However, the response after the …

A high precision two-axis GMR angular sensor manufactured by post-annealing

Z Zhou, Z Cao, S Yan, X Wang, L Xie, S Lu… - Science China …, 2024 - Springer
Conclusion This work demonstrates a high-precision in-plane two-axis GMR angle sensor is
prepared by post-annealing. The pinning direction of the GMR strips is modulated by …

Magnetic coupling governed pinning directions in magnetic tunnel junctions under magnetic field annealing with zero magnetic field cooling

W Chen, S Yan, Z Cao, S Lu, X Zhao, R Hao… - Science China …, 2023 - Springer
Conclusion This study demonstrates the manipulation of the pinning direction in MTJs with
varying tIrMn under the zero magnetic field cooling process, which results from the …

Reversal of the Pinning Direction in the Synthetic Spin Valve with a NiFeCr Seed Layer

S Yan, W Chen, Z Zhou, Z Li, Z Cao, S Lu, D Zhu… - Nanomaterials, 2022 - mdpi.com
The effect of the seed layers on the magnetic properties of the giant magnetoresistance thin
films has received a lot of attention. Here, a synthetic spin valve film stack with a wedge …

Numerical Study of Field-circuit Coupling and Output Response of TMR Current Sensor

W Si, C Fu, D Ju, C Chen, S Qian… - … on Power and …, 2023 - ieeexplore.ieee.org
Current sensors based on the tunneling magnetoresistance effect (TMR) have many
advantages, such as small size, high sensitivity, wide measurement range, etc. In this paper …

[PDF][PDF] Reversal of the Pinning Direction in the Synthetic Spin Valve with a NiFeCr Seed Layer. Nanomaterials 2022, 12, 2077

S Yan, W Chen, Z Zhou, Z Li, Z Cao, S Lu, D Zhu… - 2022 - academia.edu
The effect of the seed layers on the magnetic properties of the giant magnetoresistance thin
films has received a lot of attention. Here, a synthetic spin valve film stack with a wedge …

[PDF][PDF] spintronics flexible devices in Pt/Co stacks

S Eimer, H Cheng - Sci China Inf Sci, for - researchgate.net
The magnetic properties in Substrate/Pt/Co multilayers, such as perpendicular magnetic
anisotropy (PMA), are of particular interest for spintronic devices. In particular, it is important …