Oxide and 2D TMD semiconductors for 3D DRAM cell transistors
As the scaling of conventional dynamic random-access memory (DRAM) has reached its
limits, 3D DRAM has been proposed as a next-generation DRAM cell architecture. However …
limits, 3D DRAM has been proposed as a next-generation DRAM cell architecture. However …
Amorphous/crystalline heterostructured indium (III) sulfide/carbon with favorable kinetics and high capacity for lithium storage
Y Xue, T Xu, Y Guo, H Song, Y Wang, Z Guo… - … Composites and Hybrid …, 2024 - Springer
Nanostructured metal sulfides (MSs) are considered prospective anodes for Li-ion batteries
(LIBs) due to their high specific capacity and abundant raw materials on Earth. Nevertheless …
(LIBs) due to their high specific capacity and abundant raw materials on Earth. Nevertheless …
Improving the Thermal Stability of Indium Oxide n-Type Field-Effect Transistors by Enhancing Crystallinity through Ultrahigh-Temperature Rapid Thermal Annealing
CS Huang, CC Shih, WW Tsai, WY Woon… - … Applied Materials & …, 2025 - ACS Publications
Ultrathin indium oxide films show great potential as channel materials of complementary
metal oxide semiconductor back-end-of-line transistors due to their high carrier mobility …
metal oxide semiconductor back-end-of-line transistors due to their high carrier mobility …
Atomic Layer Deposition of WO3-Doped In2O3 for Reliable and Scalable BEOL-Compatible Transistors
Tungsten oxide (WO3) doped indium oxide (IWO) field-effect transistors (FET), synthesized
using atomic layer deposition (ALD) for three-dimensional integration and back-end-of-line …
using atomic layer deposition (ALD) for three-dimensional integration and back-end-of-line …
Defect-engineered black indium oxide: A high-performance photothermal material for solar-driven water purification
Defect engineering is a core strategy for controlling the optical, electronic, electrical, and
catalytic properties of oxide-based semiconductors. In this study, we used indium oxide as a …
catalytic properties of oxide-based semiconductors. In this study, we used indium oxide as a …
Sub-5 nm Ultrathin In2O3 Transistors for High-Performance and Low-Power Electronic Applications
Ultrathin oxide semiconductors are promising candidates for back-end-of-line (BEOL)
compatible transistors and monolithic three-dimensional integration. Experimentally …
compatible transistors and monolithic three-dimensional integration. Experimentally …
Self-Aligned Ionic Doping of TiO2 Thin-Film Transistors for Enhanced Current Drivability via Postfabrication Superacid Treatment
Oxide semiconductor thin-film transistors (TFTs) have shown great potential in emerging
applications such as flexible displays, radio-frequency identification tags, sensors, and back …
applications such as flexible displays, radio-frequency identification tags, sensors, and back …
Breaking the Trade‐Off Between Mobility and On–Off Ratio in Oxide Transistors
YC Chang, ST Wang, YT Lee, CS Huang… - Advanced …, 2024 - Wiley Online Library
Amorphous oxide semiconductors (AOS) are pivotal for next‐generation electronics due to
their high electron mobility and excellent optical properties. However, In2O3, a key material …
their high electron mobility and excellent optical properties. However, In2O3, a key material …
Enhancing AC stress stability in amorphous indium gallium zinc oxide thin-film transistors via controlled hydrogen diffusion
Amorphous oxide semiconductors (AOS) offer significant benefits in electronics, such as
high electron mobility, optical transparency, low off-current, and low-temperature fabrication …
high electron mobility, optical transparency, low off-current, and low-temperature fabrication …
Spectroscopic Analysis of Electrical Phenomena and Oxygen Vacancy Generation for Self-Aligned Fully Solution-Processed Oxide Thin-Film Transistors
K Auewattanapun, JPS Bermundo… - … Applied Materials & …, 2024 - ACS Publications
This work unveils critical insights through spectroscopic analysis highlighting electrical
phenomena and oxygen vacancy generation in self-aligned fully solution-processed oxide …
phenomena and oxygen vacancy generation in self-aligned fully solution-processed oxide …