A W-Band Balanced Power Amplifier Using Broadside Coupled Strip-Line Coupler in SiGe BiCMOS 0.13- Technology
Load-variation insensitivity, for impedance matching between power amplifiers (PAs) and
transmitting antennas, contributes to challenging the design of millimeter-wave wireless …
transmitting antennas, contributes to challenging the design of millimeter-wave wireless …
Integrated inverse class-F silicon power amplifiers for high power efficiency at microwave and mm-wave
SY Mortazavi, KJ Koh - IEEE Journal of Solid-State Circuits, 2016 - ieeexplore.ieee.org
This paper presents two 2-stage inverse class-F power amplifiers (PAs) at 24 GHz and 38
GHz, integrated in 0.13 μm SiGe BiCMOS technology. The PAs are composed of an inverse …
GHz, integrated in 0.13 μm SiGe BiCMOS technology. The PAs are composed of an inverse …
A 15.5-dBm 160-GHz high-gain power amplifier in SiGe BiCMOS technology
This letter presents the design of a 160 GHz cascode based differential power amplifier (PA)
realized in a 130 nm SiGe BiCMOS technology. It consists of 4 driving stages and an output …
realized in a 130 nm SiGe BiCMOS technology. It consists of 4 driving stages and an output …
A low-cost miniature 120GHz SiP FMCW/CW radar sensor with software linearization
Y Sun, M Marinkovic, G Fischer… - … Solid-State Circuits …, 2013 - ieeexplore.ieee.org
This paper presents an integrated mixed-signal 120GHz FMCW/CW radar chipset in a 0.13
μm SiGe BiCMOS technology. It features on-chip MMW built-in-self-test (BIST) circuits, a …
μm SiGe BiCMOS technology. It features on-chip MMW built-in-self-test (BIST) circuits, a …
Ageing and thermal recovery of advanced SiGe heterojunction bipolar transistors under long-term mixed-mode and reverse stress conditions
GG Fischer, G Sasso - Microelectronics Reliability, 2015 - Elsevier
The main reliability issue in SiGe heterojunction bipolar transistors (HBT) is the cumulative
base current degradation which they may experience during circuit operation. This …
base current degradation which they may experience during circuit operation. This …
High-efficiency class-E power amplifiers for mmwave radar sensors: Design and implementation
This article presents high-efficiency power amplifiers (PAs) implemented in Texas
Instruments'(TI) 130-nm BiCMOS process for-and-band millimeter-wave (mmWave) radar …
Instruments'(TI) 130-nm BiCMOS process for-and-band millimeter-wave (mmWave) radar …
Switchable V-band Power Amplifier with Ultra-Fast Turn-On for Aggressive Duty-Cycling
Aggressive duty-cycling is an approach to reduce the DC power demand of wireless
networks. Turning off the power hungry blocks as often and as long as possible requires …
networks. Turning off the power hungry blocks as often and as long as possible requires …
A 4.2-to-5.4 GHz stacked GaAs HBT power amplifier for C-band applications
M Liu, P Xu, J Zhang, B Liu, L Zhang - Circuit World, 2020 - emerald.com
Purpose Power amplifiers (PAs) play an important role in wireless communications because
they dominate system performance. High-linearity broadband PAs are of great value for …
they dominate system performance. High-linearity broadband PAs are of great value for …
Doubly-tuned transformer-based class-E power amplifiers in 130 nm BiCMOS for mmWave radar sensors
This paper presents high-efficiency V-band and E-band power amplifiers (PAs) for mmWave
radar sensors. High-efficiency mmWave operation is enabled by a doubly-tuned transformer …
radar sensors. High-efficiency mmWave operation is enabled by a doubly-tuned transformer …