This study suggests a breakthrough toward the high-cost issue of electrochemical
degradation of refractory organic pollutants caused by adopting a boron-doped diamond …

In this work, sulfur addition has been employed on the boron-doped diamond growth
process, and a significant regulation of the boron doping and the growth behavior has been …

In this work, high quality boron-oxygen co-doped homoepitaxial diamond has been
proposed. The morphology of diamond was smooth and flat with the O 2/H 2 ratios less than …

Obtaining desirable electrical properties from B-doped single crystal diamond (SCD) films
hinges on precise control of boron incorporation into the crystal lattice structure. In this study …

Homoepitaxial growth of step-flow single crystal diamond was performed by microwave
plasma chemical vapor deposition system on high-pressure high-temperature diamond …

Regulation of oxygen on properties of moderately boron-doped diamond films is fully
investigated. Results show that, with adding a small amount of oxygen (oxygen-to-carbon …

For the fabrication of vertical power electronic components, the use of a freestanding highly
boron‐doped single crystal diamond substrate is mandatory, on top of which a thin low …

In this work, first, we investigate the effect of nitrogen addition in microwave plasma
enhanced chemical vapor deposition on the growth of thick {113} epitaxial diamond layers …

This work investigates the suppression and compensation effect of oxygen on the behaviors
and characteristics of heavily boron-doped microwave plasma chemical vapor deposition …

In the present study, a growth strategy allowing widening thick heavily boron doped (113)-
oriented diamonds is proposed. It relies on a geometrical model developed at the LSPM …